We present infrared spectra ͑0.1-1 eV͒ of electrostatically gated bilayer graphene as a function of doping and compare it with tight-binding calculations. All major spectral features corresponding to the expected interband transitions are identified in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry are observed that we use to extract several band parameters. The structures related to the gate-induced band gap are less pronounced in the experiment than predicted by the tight-binding model that uses parameters obtained from previous experiments on graphite and recent self-consistent band-gap calculations.

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BiTeI is a giant Rashba spin splitting system, in which a noncentrosymmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to 15 GPa. The gap feature in the optical conductivity vanishes above p ∼ 9 GPa and does not reappear up to at least 15 GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at 9 GPa. Using high-pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring. DOI: 10.1103/PhysRevLett.112.047402 PACS numbers: 78.20.hb, 62.50.-p, 78.30.Am, 78.40.Fy Interest in the noncentrosymmetric semiconductor BiTeI surged when it was found that this compound hosts the largest known Rashba spin splitting in bulk form [1][2][3]. While this material is structurally related to the recently discovered bismuth chalcogenide topological insulators [4,5], it is an insulator of the common variety at ambient pressure. Recent first-principles band structure calculations suggested that BiTeI undergoes a transition to the topological insulating phase under pressure [6], through which BiTeI would become the first example of noncentrosymmetric topological insulator. Moreover, such a bandstructure topology change realizes a remarkable example of topological phase transition. While several examples of topological phase transitions occurring upon varying chemical composition have been reported in the literature [7][8][9], the pressure-induced transition in BiTeI would present the advantage of being controllable and reversible.Optical conductivity is well suited to probe the band structure of BiTeI under pressure. In this Letter, we determine the high-pressure optical properties by measuring transmission and reflectivity of BiTeI up to 15 GPa. We follow the optical gap under pressure and find that it decreases monotonically until 9 GPa. At this pressure the plasma edge associated with the doped carriers is strongly broadened due to a sudden increase of σ 1 ðωÞ at the plasma frequency. Above this pressure the gap feature in the optical conductivity has disappeared, and it does not reappear to the highest pressure reached. The high-pressure phase appears to be metallic. Using Raman spectroscopy, we observe a sudden change in the number and frequency of the vibrational modes at 9 GPa, which shows that a structural transition occurs at this pressure.Single crystals of BiTeI were grown by the floating zone method, starting from the stoichiometric ratio of metallic bismuth, tellurium and bismuth iodide. The unit cell of BiTeI is composed of triple layers, Te-Bi-I, stacked along the polar c-axis [1]. The triple layers are bound by a weak van der Waals interaction. The structure is described by the noncentrosymmetric space...

We report a rotationally resolved analysis of the high resolution FTIR spectrum of naphthalene which can be considered as a prototypical molecule for polycyclic aromatic hydrocarbons (PAHs), and a similar analysis for the prototypical heterocyclic aromatic molecule indole. The spectra have been measured using a resolution of 0.0008 cm(-1) (21 MHz) with the new high resolution FTIR prototype spectrometer of the Molecular Kinetics and Spectroscopy Group at ETH Zürich. The spectrometer is connected to the infrared port available at the Swiss Light Source (SLS) at the Paul-Scherrer-Institute (PSI). Due to the high brightness of the synchrotron radiation in the spectral region of interest, effectively up to 20 times brighter than thermal sources, and the high resolution of the new interferometer, it was possible to record the rotationally resolved infrared spectra of naphthalene and indole at room temperature, and to analyse the ν46 c-type band (ν̃(0) = 782.330949 cm(-1)) of naphthalene as well as the ν35 c-type band (ν̃(0) = 738.483592 cm(-1)) of indole and an a-type band at ν̃(0) = 790.864370 cm(-1) tentatively assigned as the overtone 2ν(40) of indole. The results of the naphthalene band analysis are discussed in relation to the Unidentified Infrared Band (UIB) found in interstellar spectra at 12.8 μm.

Structures of very high aspect ratio which are mechanically stiff in the substrate direction and flexible in the direction parallel to the substrate are studied. Such structures can be exploited to produce thermal flexure actuators which are capable of large motion produced by thermal expansion. The magnitude of the deflection depends strongly on geometry and material properties. Structures fabricated by laser micro-machining are characterized and compared to numerical simulations.

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of Eg 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm −1 is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.

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