A radiochemical study of the adsorption of ruthenium ions onto GaAs surfaces is performed using solutions labeled with J26Ru3+. The eovcrugc-time characteristics have been determined for a variety of conditions, including changes in the etching procedure, the Ru3+ concentration, the solvent for RuC13, and the incident light intensity. Additional gallium and arsenic analyses combined with transmission electron microscopy observations have revealed that the corrosion of GaAs in acid solutions is considerably enhanced due to the presence of Ru3+ ions. This finding is discussed in terms of a galvanic displacement reaction leading to reduced Ru species, most likely to metallic Ru. Experimental results are presented indicating that adsorbed Ru is mainly incorporated in an oxidic surface phase.
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