Climb of edge dislocations in plastically deformed GaP

Dislocation cell structures in melt‐grown semiconductor compound crystals

“…lowest native point defect reservoir of all III-Vs. In fact, concerning the deformation experiments of Wagner et al [60] at 600 °C the probability to climb drops in the order GaAs > GaP > InP. From all these material facts it is now quite understandable why undoped asgrown InP crystals do not exhibit indications of pronounced cellular patterning.…”

“…The appearance of characteristic slip bands are reported [58] which prevail the plastic deformation in such specimens at temperatures as low as 700 °C. A very important observation is given by Wagner, Paufler and Rotsch [60]. They found that all deformed samples exhibit indications of dislocation climb already at temperatures above 600 °C and attributed phosphor vacancies (V P ) to the dominant assisting intrinsic point defect.…”

“…The dislocation behaviour in GaP crystals has been widely investigated by post-deformation experiments (see [58,59,60], for example) but, unfortunately, the analysis was not directed on the dislocation cell structuring. This is, obviously, due to the use of mostly S-doped material in which the cell formation process is restrained similar to doped GaAs (Sect.…”

“…Table 1 Material properties important for dislocation dynamics in undoped semiconductor compounds compiled from the current literature, e.g. [54,60,85,86,87,88] and textbooks. For comparison the data of copper are added.…”