Single Crystals of Electronic Materials 2019
DOI: 10.1016/b978-0-08-102096-8.00006-9
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III Arsenide

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Cited by 7 publications
(9 citation statements)
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“…In this study, we chose the setvalues of temperatures in GaAs from the typical values of temperature gradients in the crystal and the melt in industrial processes, which are in the range of 15 K cm −1 and 2-10 K cm −1 , respectively. [21] In addition to the RMSE values, the results were also discussed with regard to the inputs (features) importance determined using the Random Forest (RF) method.…”
Section: Data-driven Methodsmentioning
confidence: 99%
“…In this study, we chose the setvalues of temperatures in GaAs from the typical values of temperature gradients in the crystal and the melt in industrial processes, which are in the range of 15 K cm −1 and 2-10 K cm −1 , respectively. [21] In addition to the RMSE values, the results were also discussed with regard to the inputs (features) importance determined using the Random Forest (RF) method.…”
Section: Data-driven Methodsmentioning
confidence: 99%
“…Weak buoyancy-driven melt convection [22] was described by the laminar flow model. All CFD simulations were performed using quasi steady-state (QSS) assumption.…”
Section: ∇•mentioning
confidence: 99%
“…The GaAs material properties used in this study are given in [22]. The crystals were grown in Ar atmosphere under the pressure of 4 bar.…”
Section: ∇•mentioning
confidence: 99%
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“…The later originates from low heat conductivity of GaAs (λ m = 0.178 W/cm/K and λ s = 0.071 W/cm/K at T m = 1512 K) that hampers latent heat removal. The growth rate is slow (~2-4 mm/h), process temperature range narrow (grad T melt ~2-5 K/cm; grad T crystal ~15 K/cm) and critical shear stress low (σ cr = 0.587 MPa at 40 K below T m ) [2].…”
Section: Introductionmentioning
confidence: 99%