Inexpensive radiofrequency devices that can meet the ultrahigh-frequency needs of fifth-and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radiofrequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.
A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vihration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor ( Q = 130000) and current output (&AX 160 PA) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.
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