Wafer-Level Transfer Technologies for PZT-Based RF MEMS Switches

Guerre, Roland; Drechsler, Ute; Bhattacharyya, D. P.; Rantakari, Pekka; Stutz, R.; Wright, Robert V.; Milosavljevic, Z.D.; Vähä-Heikkilä, T.; Kirby, Paul B.; Despont, M.

doi:10.1109/jmems.2010.2047005

Cited by 45 publications

(32 citation statements)

References 46 publications

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“…[22] To address these shortcomings of wafer-level heterogeneous integration platforms, modified heterogeneous integration schemes have been proposed. These technologies include wafer-to-wafer selective component distribution, also called microdevice distribution (MD) technology [22][23][24][25], chip-to-wafer pick-and-place technologies [26,27], the use of expandable handle substrates [28] and chip-to-wafer selfassembly techniques [1]. Fig.…”

Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

“…Fig. 14 shows how this method has been applied for the distribution of RF circuitry and RF MEMS switches [23]. The piezoelectrically actuated beams that are transferred to the RF substrates consist of a 1.5 µm silicon nitride structural layer and a deposited layer of PZT, Pb(Zr 30 Ti 70 )O 3 , which is grown onto a non-planar mixed interlayer of TiO 2 and Ti/Pt.…”

Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

“…Piezoelectrically actuated beams are fabricated on the source wafer and are selectively transferred to the receiver wafers. [22][23][24][25] An elegant solution for via-last heterogeneous integration of expensive III-V materials that are only available in small wafer sized onto standard sized silicon wafers is shown in Fig. 15 [26].…”

Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

See 2 more Smart Citations

Wafer-level heterogeneous 3D integration for MEMS and NEMS

Niklaus

Lapisa

Bleiker

et al. 2012

2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration

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Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

Section: Wafer-level Heterogeneous 3d Integration Platforms Using mentioning

confidence: 99%

See 1 more Smart Citation

Wafer-level heterogeneous 3D integration for MEMS and NEMS

Niklaus

Lapisa

Bleiker

et al. 2012

2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration

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“…For example, polymer films have been tested as protective encapsulation of PZT (Guerre et al 2010), as PZT micromolds (Navarre et al 2007;Park et al 2003), for improving properties of complementary layers in acoustic transducers (Dellmann et al 1997), to carry large numbers of electrical interconnects across PZT beams (Aktakka et al 2014) and to tailor damping properties of a piezoelectric accelerometer (Nemirovsky et al 1996). However, in these applications polymer materials are not playing a key structural role in generating motion.…”

Section: Introductionmentioning

confidence: 99%

Thin-film piezoelectric and high-aspect ratio polymer leg mechanisms for millimeter-scale robotics

Choi

Shin

Rudy

et al. 2017

Int J Intell Robot Appl

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Millimeter-scale micro-robotic leg actuators are described that integrate thin-film lead zirconate titanate (PZT) piezoelectric actuation with compliant structures formed from parylene-C polymer. Models for out-of-plane rotation using piezoelectric cantilevers and in-plane rotation using highaspect ratio polymer beams are discussed. Opportunities are highlighted for thin polymer films to aid in load-bearing, flexibility, and resilience of piezoelectric micro-robot appendages. A simple 5 mm 9 2.4 mm 9 0.15 mm hexapod robot prototype incorporating multiple actuators in each leg assembly is fabricated and tested within the silicon wafer in which it was built. Completed robot leg performance shows close agreement between modeled and tested static and dynamic characteristics, with potential benefits for future walking micro-robots from low power requirements relative to payload capacity and large amplitude motion at resonance.

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“…In the other hand, several piezoelectric actuated MEMS switches with low-voltage actuation of less than 15 V have been demonstrated [4,5], however the switch lifetime is referred only a little. One of the reason is that the beams of piezoelectric actuators are SiO2 thin films, therefore it is difficult to realize a large restoring force.…”

Section: Introductionmentioning

confidence: 99%

A highly reliable single-crystal silicon RF-MEMS switch using Au sub-micron particles for wafer level LTCC cap packaging

Katsuki

Nakatani

Okuda

et al. 2012

2012 2nd IEEE CPMT Symposium Japan

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This paper presents a small packaged, reliable and low-voltage driven RF-MEMS switch for wireless communication. We developed novel fabrication process of an RF-MEMS switch using a PZT actuator without a backside cavity to realize wafer-level-packaging (WLP). We also developed organic-free WLP process using sub-micron Au particles simultaneously to contact electrically and to seal hermetically with a low temperature co-fired ceramics (LTCC) wafer as a cap on a multilevel height RF switch. As a result, we obtained a small packaged SPST switch, which is in the small size of 1.4 x 0.9 x 0.8 mm. The RF-MEMS switch operated keeping a low contact resistance (<3 Ω) up to 1 billion cycles at a low-power condition (DC 1 mW). IntroductionRF-MEMS switches are attractive due to their low insertion loss, high isolation, and excellent linearity[1]. However, none of the MEMS switches have been commercially assembled for mobile phones yet because switches in mobile applications are required for a low-voltage operation less than 10-20 voltage and long switch lifetime more than 10^9-10^10 cycles.Although highly reliable MEMS switches using electrostatic actuation have been realized [2,3], their actuation voltages are 60-90 V. This is because a large contact force is necessary for sustaining a low contact resistance through quite a lot of switching cycles. A large restoring force is also required to avoid the stiction problem, so reducing the stiffness of the movable part is not allowed.In the other hand, several piezoelectric actuated MEMS switches with low-voltage actuation of less than 15 V have been demonstrated [4,5], however the switch lifetime is referred only a little. One of the reason is that the beams of piezoelectric actuators are SiO2 thin films, therefore it is difficult to realize a large restoring force.We have already reported an RF-MEMS switch that had a stiff movable beam based on a single crystal silicon (SCS) using a silicon-on-insulator (SOI) wafer and with a piezoelectric actuator to realize high reliability [6]. However, we formed a cavity using backside deep RIE in a handle substrate for our conventional switch, and it was then impossible for it to be hermetically sealed with a cap wafer.In this work, we developed novel fabrication process without a backside cavity and realized WLP using an LTCC cap wafer.

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Wafer-Level Transfer Technologies for PZT-Based RF MEMS Switches

Cited by 45 publications

References 46 publications

Wafer-level heterogeneous 3D integration for MEMS and NEMS

Wafer-level heterogeneous 3D integration for MEMS and NEMS

Thin-film piezoelectric and high-aspect ratio polymer leg mechanisms for millimeter-scale robotics

A highly reliable single-crystal silicon RF-MEMS switch using Au sub-micron particles for wafer level LTCC cap packaging

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