A 12 MHz micromechanical bulk acoustic mode oscillator

Mattila, T.; Kiihamäki, Jyrki; Lamminmäki, Tuomas; Jaakkola, Olli; Rantakari, Pekka; Oja, Aarne; Seppä, Heikki; Kattelus, Hannu; Tittonen, Ilkka

doi:10.1016/s0924-4247(02)00204-2

Cited by 121 publications

(76 citation statements)

References 18 publications

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“…11 From the resonance response a Q factor of 3100 is found, which is considered good for the specific device, but indicates that there is still room for improvement compared to similar ͑monocrystalline Si͒ devices operated in vacuum. 12 To evaluate the mass sensitivity, the device is first measured in air, then a small mass of a platinum compound is deposited on the resonator structure, as seen in Fig. 4.…”

Section: Figmentioning

confidence: 99%

Longitudinal bulk acoustic mass sensor

Hales

Teva

Boisen

et al. 2009

Applied Physics Letters

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Section: Figmentioning

confidence: 99%

Longitudinal bulk acoustic mass sensor

Hales

Teva

Boisen

et al. 2009

Applied Physics Letters

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“…58 Si is often used in MEMS, with the reported Q-factors for silicon resonators of the order of 1.4-1.6 Â 10 5 . 59,60 Silicon in combination with germanium, and germanium on its own, have also been used in a polycrystalline form, with Si 0.35 Ge 0.65 MEMS having Q ¼ 70 in air and 14 000 in vacuum, and poly Ge having Q ¼ 45 in air and 30 000 in vacuum at room temperature. 61 Q-factors vary greatly when measured in atmosphere or in a vacuum.…”

Section: Membrane Vibrational Propertiesmentioning

confidence: 99%

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah

Rhead

Halpin

et al. 2014

Journal of Applied Physics

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-forprofit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:Copyright ( A note on versions:The version presented in WRAP is the published version or, version of record, and may be cited as it appears here.For more information, please contact the WRAP A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Perot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials. V C 2014 AIP Publishing LLC. [http://dx

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“…The use of such devices as frequency references for RF communication systems is very attractive. Their very high quality factor [2,3] implies a very low phase noise for oscillators including a MEMS resonator as the frequency selective element, D. Paci ( ) IEIIT-Sezione di Pisa, CNR, Via Caruso, 56122 Pisa, Italy e-mail: dario.paci@iet.unipi.it D. Paci · M. Mastrangeli · A. Nannini · F. Pieri Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via Caruso, 56122 Pisa, Italy which, in turns, implies a very high short term stability [2]. To evaluate their overall performance as frequency references, many studies about long term stability of the resonance frequency [4] and its dependence on the temperature [5,6] have been carried out.…”

Section: Introductionmentioning

confidence: 99%

Modeling and characterization of three kinds of MEMS resonators fabricated with a thick polysilicon technology

Paci

Mastrangeli

Nannini

et al. 2006

Analog Integr Circ Sig Process

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Three different kinds of two-port flexural resonators, with both clamped and free ends, and with nominal resonance frequencies between 5 MHz and 50 MHz, were designed and fabricated. Among them, a novel free-free third-mode resonator, as well as a tunable free-free resonator, designed to maintain a high quality factor despite its tunability, are presented. Because of reduced energy loss in the clamps, higher quality factors are expected from free-free devices.To estimate the resonators performance, the effect of temperature and axial stresses on the resonators is investigated: for the clamped-clamped resonator, a theoretical model is also presented. FEM simulations are performed for the three geometries and the results are discussed.

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A 12 MHz micromechanical bulk acoustic mode oscillator

Cited by 121 publications

References 18 publications

Longitudinal bulk acoustic mass sensor

Longitudinal bulk acoustic mass sensor

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Modeling and characterization of three kinds of MEMS resonators fabricated with a thick polysilicon technology

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