Half-Heusler alloys based on TiNiSn are promising thermoelectric materials characterized by large power factors and good mechanical and thermal stabilities, but they are limited by large thermal conductivities. A variety of strategies have been used to disrupt their thermal transport, including alloying with heavy, generally expensive, elements and nanostructuring, enabling figures of merit, ZT ≥ 1 at elevated temperatures (>773 K). Here, we demonstrate an alternative strategy that is based around the partial segregation of excess Cu leading to grain-by-grain compositional variations, the formation of extruded Cu "wetting layers" between grains, and-most importantly-the presence of statistically distributed interstitials that reduce the thermal conductivity effectively through point-defect scattering. Our best TiNiCuSn (y ≤ 0.1) compositions have a temperature-averaged ZT = 0.3-0.4 and estimated leg power outputs of 6-7 W cm in the 323-773 K temperature range. This is a significant development as these materials were prepared using a straightforward processing method, do not contain any toxic, expensive, or scarce elements, and are therefore promising candidates for large-scale production.

An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm 2 V %1 s %1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm 2 V %1 s %1 and 1.9 ' 10 11 cm %2 , respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III-V and II-VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.

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Addition of Cu to XNiSn half-Heuslers improves homogeneity and reduces thermal conductivity without affecting electron mobility.

Microstructure and point defects are central to thermoelectric performance in vacancy half-Heuslers.

The vibrations of a single-crystal germanium (Ge) membrane are studied in air and vacuum using laser vibrometry, in order to determine mechanical properties such as Q-factors, tensile stress, anisotropy, and robustness to shock. Resonance modes up to 3:2 are identified, giving a residual stress measurement of 0.22 GPa, consistent with the value obtained from x-ray relaxation studies. The membrane is found to be isotropic, with Q-factors ranging from around 40 at atmospheric pressure to over 3200 at mbar, significantly lower than those found in polycrystalline Ge micromechanical devices. The robustness to shock is explained through the high resonance mode frequencies and the dissipation mechanism into the substrate, which is a direct consequence of having a high quality film with low residual tensile stress, giving the potential for such films to be used in optoelectronic devices.

We present the observation of weak antilocalization due to the Rashba spin-orbit interaction, through magnetoresistance measurements performed at low temperatures and low magnetic fields on a high mobility (777,000 cm(2) V(-1) s(-1)) p-Ge/SiGe quantum well heterostructure. The measured magnetoresistance over a temperature range of 0.44 to 11.2 K shows an apparent transition from weak localization to weak antilocalization. The temperature dependence of the zero field conductance correction is indicative of weak localization using the simplest model, despite the clear existence of weak antilocalization. The Rashba interaction present in this material, and the absence of the un-tuneable Dresselhaus interaction, indicates that Ge quantum well heterostructures are highly suitable for semiconductor spintronic applications, particularly the proposed spin field effect transistor.

The upcoming Mars Sample Return (MSR) mission aims to deliver small quantities of Martian rocks to the Earth. Investigating these precious samples requires the development and application of techniques that can extract the greatest amount of high quality data from the minimum sample volume, thereby maximising science return from MSR. Atom probe tomography (APT) and transmission electron microscopy (TEM) are two complementary techniques that can obtain nanoscale structural, geochemical and, in the case of atom probe, isotopic information from small sample volumes. Here we describe how both techniques operate, as well as review recent developments in sample preparation protocols. We also outline how APT has been successfully applied to extraterrestrial materials in the recent past. Finally, we describe how we have studied Martian meteorites using TEM and APT in close coordination in order to characterise the products of water/rock interactions in t h e cru st of Ma r s – a k ey sc ie n ce goal of MSR. Our results provide new insights into the Martian hydrosphere and the mechanisms of anhydrous-hydrous mineral replacement. In light of the unique results provided by these tools, APT and TEM should form a crucial part at the culmination of a correlative analytical pipeline for MSR mission materials.