Articles you may be interested inExperimental approaches to zero-field spin splitting in a gated high-mobility In 0.53 Ga 0.47 As / InP quantum well structure: Weak antilocalization and beating pattern J. Appl. Phys. 107, 053708 (2010); 10.1063/1.3309786Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor Low Temp.

An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm 2 V %1 s %1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm 2 V %1 s %1 and 1.9 ' 10 11 cm %2 , respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III-V and II-VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.

We present the observation of weak antilocalization due to the Rashba spin-orbit interaction, through magnetoresistance measurements performed at low temperatures and low magnetic fields on a high mobility (777,000 cm(2) V(-1) s(-1)) p-Ge/SiGe quantum well heterostructure. The measured magnetoresistance over a temperature range of 0.44 to 11.2 K shows an apparent transition from weak localization to weak antilocalization. The temperature dependence of the zero field conductance correction is indicative of weak localization using the simplest model, despite the clear existence of weak antilocalization. The Rashba interaction present in this material, and the absence of the un-tuneable Dresselhaus interaction, indicates that Ge quantum well heterostructures are highly suitable for semiconductor spintronic applications, particularly the proposed spin field effect transistor.