Progress on mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb and InAs substrates is reported. GaInAsSb p/n and p-i-n detectors and InAsSbP p/n detector structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 tm and 2.9 tm respectively. Room temperature background noise-limited detectivity (D*BLIp) of4 x 1010 cmHz'2/W for GaInAsSb detectors and 4 x 108 cmHz'2/W for InAsSbP was measured.
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