Uncooled low-voltage AlGaAsSb/InGaAsSb/GaSb avalanche photodetectors

Sulima, O.V.; Mauk, Michael G.; Shellenbarger, Z.A.; Cox, J.A.; Li, J.V.; Sims, Paul E.; Datta, Shubhashish; Rafol, Sir B.

doi:10.1049/ip-opt:20040142

Cited by 29 publications

(12 citation statements)

References 3 publications

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“…The quaternary alloy Ga x In 1Àx As y Sb 1Ày lattice matched to gallium antimonide (GaSb) is a material of great interest for its potential applications in the fabrication of high performance photodetectors, [1][2][3] light emitting diodes, 4,5 and lasers 6,7 operating in the near to midinfrared region (1.7-4.4 mm). The detectors fabricated using GaInAsSb epilayers suffer from large reverse bias leakage currents, which is a common problem in the case of antimony based III-V compound semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Bhagwat

Xiao

Bhat

et al. 2006

Journal of Elec Materi

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This paper reports the fabrication and characterization of GaInAsSb photodetectors operating at 2 mm. At room temperature, the performance of these photodiodes under reverse bias conditions is limited by the surface leakage. A model has been developed to separate the bulk (diffusion and generation-recombination (g-r)) and the surface leakage contributions toward the total leakage current. By fitting this model to the experimental data, values of material parameters such as minority carrier diffusion length and lifetime have been estimated. The highest R 0 A of 55 V-cm 2 has been obtained with a responsivity of 0.44 A/W at 2 mm.

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Section: Introductionmentioning

confidence: 99%

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Bhagwat

Xiao

Bhat

et al. 2006

Journal of Elec Materi

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“…Smoke detectors can work by optical detection (photoelectric) or by physical process (ionization), but some smoke detectors also utilize both types of detector to increase the sensitivity to smoke [1]- [3]. In this paper, enhancement done on already available photoelectric smoke detector circuitry by integrating some distinct features like wireless technology, sms sending through gsm module and fire extinguishing vehicle [4].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Wireless Control System for Smoke and Fire Detection

Islam¹,

Abdullah²,

Sarowar³

2013

IJCEE

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Abstract-This paper describes the design and engineering of a wireless control system for smoke and fire detection with alarming provision, sms sending and fire extinguishing by a vehicle. We chose the PIC microcontroller for the controlling of the system. The implemented design is so cheap and effective. The sms sending feature included in the design increases the reliability of the system so that it can notify the fire hazard when there is no person available nearby. The fire extinguishing vehicle is a unique feature and it gives a provision to extinguish fire during its very early stage. The design will increase the safety and reliability with reducing the risks to life and property.

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“…Several articles reported different device structures using materials such as InGaAsSb and AlGaAsSb [10][11][12][13][14][15][16] . Several reports discussed the performance of InGaAsSb APD especially for applications such as optical communication [10][11][12][13][14] . Such devices usually involve complicated structures and sophisticated growth and processing procedures.…”

Section: Introductionmentioning

confidence: 99%

InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

et al. 2006

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High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance.In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10 9 cmHz 1/2 /W at 2-µm was obtained at 100 o C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 o C allows to increase the bias to 3V and enhance the detectivity to 8.7x10 10 cmHz 1/2 /W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 µs at 2V and 100 o C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10 -7 W/cm 2 and 31.6 mW/cm 2 .

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Uncooled low-voltage AlGaAsSb/InGaAsSb/GaSb avalanche photodetectors

Cited by 29 publications

References 3 publications

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Enhanced Wireless Control System for Smoke and Fire Detection

InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

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