Liquid-phase epitaxy of low-bandgap III–V antimonides for thermophotovoltaic devices

Antimony Based III-V Thermophotovoltaic Devices

“…The InPAsSb quaternary alloy lattice matched to InAs can provide cells with E g in the range 0.35 to 0.5 eV. However, the advantages of such low temperature TPV systems are not presently clear, and so there has been less research on these materials and InPAsSb TPV cell performance has not been optimized [5,16,[24][25][26][27]. InPAsSb has been grown by both OMVPE and LPE, but only LPE has been used for TPV cells.…”

“…InPAsSb has been grown by both OMVPE and LPE, but only LPE has been used for TPV cells. InPAsSb was grown lattice matched to InAs substrates, and cells have been fabricated by Zn diffusion into n-InPAsSb epilayers [5,16,25,27] as well as from epitaxially grown p-n structures [26]. Another variation was an epitaxially grown p-InPAsSb/n-InAs heterojunction cell [24].…”

Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

“…High quality semiconductors can be LPEgrown for various applications [7,14]. It is, however, extremely difficult to obtain good quality InAs x Sb 1 À x epilayers by LPE when the lattice mismatch between the epilayer and the substrate is larger than 1%.…”

Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6–3.5μm

“…Recently, there has been a strong interest in thermophotovoltaic (TPV) technology [7,8], in part, due to the development of high efficient low band-gap semiconductor PV converters. TPVs are low direct-band-gap semiconductors that can convert all photons with energies higher or equal to their band gap, which is typically close to the energy corresponding to the irradiant peak in the emitter spectrum [9].…”