Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6–3.5μm

Afrailov, Muhitdin

doi:10.1016/j.infrared.2009.08.005

Cited by 14 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, in this system the liquid phase epitaxy (LPE) grown SWIR PDs has previously been demonstrated. [2][3][4] The difficulty in simultaneously controlling the three group-V elements As, P, and Sb makes the growth of device-quality wafers by using the metal-organic-vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) challenging. The other lattice-matched antimonide quaternary system of InGaAsSb on GaSb, which covers the bandgap from InAs rich corner of 0.283 eV to GaSb rich corner of 0.727 eV at 300 K, also matches the SWIR band quite well.…”

Section: Introductionmentioning

confidence: 99%

Short-wave infrared InGaAs photodetectors and focal plane arrays

et al. 2018

View full text Add to dashboard Cite

In this article, unique spectral features of short-wave infrared band of 1 µm-3 µm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

show abstract

Section: Introductionmentioning

confidence: 99%

Short-wave infrared InGaAs photodetectors and focal plane arrays

et al. 2018

View full text Add to dashboard Cite

show abstract

“…This could be used as mixed compounds such as InAsSbP, a promising candidate because it can cover the 3-5 lm mid-infrared regions adjusting its alloy composition with three V elements only. It makes InAsSbP unique in this class and has been successfully grown on InAs substrates [17][18][19][20][21][22]. Actually, InAsSbP quantum dots have been successfully grown, while in contrast, only a few studies on quaternary QDs/nanopits nucleation have been reported so far [19,20].…”

Section: Introductionmentioning

confidence: 99%