GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Shellenbarger, Z.A.; Mauk, Michael G.; Cox, J.A.; South, Joseph T.; Lesko, Joseph D.; Sims, Paul E.; DiNetta, L.C.

doi:10.1117/12.317602

Cited by 12 publications

(16 citation statements)

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“…Several materials are suitable for 2 m detection applications including the extended range InGaAs, HgCdTe, PbS, InSb and InAs, which are available commercially using different structures such as the photoconductors, p-n and pin structures. Besides, several research efforts focused on developing 2 m detectors using InGaAsP, InGaAsSb and InGaSb alloys but they are commercially unavailable 2,3 . As a ternary material, InGaSb processing is less complicated than the quaternary materials, with the possibility of tuning the cut-off wavelength compared to binaries.…”

Section: Introductionmentioning

confidence: 99%

Characterization of InGaSb detectors for 1.0- to 2.4-μm applications

et al. 2004

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Near infrared detectors in the 1 to 2.4 µm spectral range are important for many applications such as atmospheric remote sensing, where several species have strong absorption spectra in that range. Antimonide-based III-V compound semiconductor materials are good candidates for developing detectors in that spectral range. Electrical and optical characteristics of In 1-x Ga x Sb p-n photodetectors at different temperatures are presented. The devices were fabricated either on bulk InGaSb substrates by zinc diffusion or InGaSb epitaxial layers grown on GaSb substrates by organo-metallic vapor phase epitaxy (OMVPE). Variable area devices were fabricated. Current-voltage measurements indicated higher dark current in InGaSb devices grown on GaSb substrate, due to defects generated by the latticemismatch. Spectral response measurements were obtained in the 1 to 2.4 µm wavelength range at different temperatures. At room temperature, the cut-off wavelengths were observed at 2.3 and 2.1 µm for InGaSb devices grown on GaSb and for devices fabricated on bulk InGaSb substrates respectively. Reducing the operating temperature shifts the cut-off wavelength to shorter values and increases the responsivity. Noise calculations indicated a room temperature detectivities of 3.3x10 10 and 5.5x10 10 cmHz 1/2 /W at 2 µm for the GaSb and InGaSb respectively. Detectivity variation with wavelength will be presented and compared to the background limited performance.

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Section: Introductionmentioning

confidence: 99%

Characterization of InGaSb detectors for 1.0- to 2.4-μm applications

et al. 2004

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“…InGaAsSb is a promising semiconductor for developing high gain 2 µm detectors. Several articles discussed the properties of this material and its application in APD fabrication using the separate absorption and multiplication (SAM) structure [8][9][10][11][12][13][14][15][16] . Electron and hole impact ionization coefficients were evaluated and multiplication factors of 10-20 and 50-100 were achieved at 296 and 78 K, respectively, by Andreev et al [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

“…Voronina et al studied the mobility of charge carriers in InGaAsSb and its dependence on both the doping concentration and the temperature 13 . Development of p-n, pin and SAM APD structures were discussed by Shellenbarger et al using the same material [14][15][16] . Spectral response profile dependence on frontal and backward illumination of the devices has been investigated by the same group.…”

Section: Introductionmentioning

confidence: 99%

“…The detectors structure consists of a 2 µm thick passivating p + -Al 0.28 Ga 0.72 As 0.014 Sb 0.986 , Zn doped layer, and a 5 µm thick absorbing n-InGaAsSb, Te doped layer with a thin p + -In 0.15 Ga 0.85 As 0.17 Sb 0.83 , Zn doped layer between them. The doping level of the absorbing InGaAsSb layer was nominally between 2 and 4x10 16 The epitaxial layers of III-V compound materials were grown on GaSb substrates. Liquid phase epitaxial growth was applied using a standard sliding graphite boat technique and several solid-composition were investigated.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and analysis of InGaAsSb detectors

et al. 2003

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Profiling of atmospheric CO 2 at 2 µm wavelength using the LIDAR technique, has recently gained interest. Although several detectors might be suitable for this application, an ideal device would have high gain, low noise and narrow spectral response peaking around the wavelength of interest. This increases the detector signal-to-noise ratio and minimizes the background signal, thereby increasing the device sensitivity and dynamic range. Detectors meeting the above idealized criteria are commercially unavailable for this particular wavelength. In this paper, the characterization and analysis of Sb-based detectors for 2 µm lidar applications are presented. The detectors were manufactured by AstroPower, Inc., with an InGaAsSb absorbing layer and AlGaAsSb passivating layer.The characterization experiments included spectral response, current versus voltage and noise measurements. The effect of the detectors bias voltage and temperature on its performance, have been investigated as well. The detectors peak responsivity is located at the 2 µm wavelength. Comparing three detector samples, an optimization of the spectral response around the 2 µm wavelength, through a narrower spectral period was observed. Increasing the detector bias voltage enhances the device gain at the narrow spectral range, while cooling the device reduces the cut-off wavelength and lowers its noise. Noise-equivalent-power analysis results in a value as low as 4x10 -12 W/Hz 1/2 corresponding to D* of 1x10 10 cmHz 1/2 /W, at -1 V and 20 o C. Discussions also include device operational physics and optimization guidelines, taking into account peculiarity of the Type II heterointerface and transport mechanisms under these conditions.

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“…11 Benoit et al emphasized on the constrain of the electric field value and profile for fast and sensitive device and discussed dark current reduction. 12 Development of pn and SAM APD structures were discussed by Shellenbarger et al I3 " 15 Different characteristics were reported based on front and back sides illumination of the devices.…”

Section: Introductionmentioning

confidence: 99%

Spectral Response Measurements of Short Wave Infrared Detectors (Swir)

Refaat

Abedin

Singh

2003

Frontiers in Electronics

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Quantum detectors are critical components in infrared lidar receivers. They convert the optical return signal into electrical signal compatible with electronic data processing and storage devices. The detectors used in this study comprise InGaAs PIN diodes and InGaAsSb avalanche photodiodes (APDs) for short wave infrared applications and Si APDs, with different structures, for nearinfrared applications. The spectral response of these infrared detectors utilized for lidar receivers was studied with respect to operating temperature and external bias voltage. Variation of these spectral responses as a function of bias voltage and temperature was determined. This variation is employed to estimate errors in the detected lidar return signal. Results of this research finding are reported in this article. 335 Frontiers in Electronics Downloaded from www.worldscientific.com by MONASH UNIVERSITY on 04/22/17. For personal use only.

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GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Cited by 12 publications

References 0 publications

Characterization of InGaSb detectors for 1.0- to 2.4-μm applications

Characterization of InGaSb detectors for 1.0- to 2.4-μm applications

Characterization and analysis of InGaAsSb detectors

Spectral Response Measurements of Short Wave Infrared Detectors (Swir)

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