Stimulated Brillouin scattering (SBS) is traditionally viewed as a process whose strength is dictated by intrinsic material nonlinearities with little dependence on waveguide geometry. We show that this paradigm breaks down at the nanoscale, as tremendous radiation pressures produce new forms of SBS nonlinearities. A coherent combination of radiation pressure and electrostrictive forces is seen to enhance both forward and backward SBS processes by orders of magnitude, creating new geometric degrees of freedom through which photon-phonon coupling becomes highly tailorable. At nanoscales, the backward-SBS gain is seen to be 10 4 times greater than in conventional silica fibers with 100 times greater values than predicted by conventional SBS treatments. Furthermore, radically enhanced forward-SBS processes are 10 5 times larger than any known waveguide system. In addition, when nanoscale silicon waveguides are cooled to low temperatures, a further 10-100 times increase in SBS gain is seen as phonon losses are reduced. As a result, a 100-m segment of the waveguide has equivalent nonlinearity to a kilometer of fiber. Couplings of this magnitude would enable efficient chip-scale stimulated Brillouin scattering in silicon waveguides for the first time. More generally, we develop a new full-vectorial theoretical formulation of stimulated Brillouin scattering that accurately incorporates the effects of boundary-induced nonlinearities and radiation pressure, both of which are seen to have tremendous impact on photonphonon coupling at subwavelength scales. This formalism, which treats both intermode and intramode coupling within periodic and translationally invariant waveguide systems, reveals a rich landscape of new stimulated Brillouin processes when applied to nanoscale systems.

Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration have enabled table-top experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. These advances have enabled integrated quantum photonic technologies combining up to 650 optical and electrical components onto a single chip that are capable of programmable quantum information processing, chip-to-chip networking, hybrid quantum system integration, and high-speed communications. In this roadmap article, we highlight the status, current and future challenges, and emerging technologies in several key research areas in integrated quantum photonics, including photonic platforms, quantum and classical light sources, quantum frequency conversion, integrated detectors, and applications in computing, communications, and sensing. With advances in materials, photonic design architectures, fabrication and integration processes, packaging, and testing and benchmarking, in the next decade we can expect a transition from single- and few-function prototypes to large-scale integration of multi-functional and reconfigurable devices that will have a transformative impact on quantum information science and engineering.

Radiation pressure is known to scale to large values in engineered micro and nanoscale photonic waveguide systems. In addition to radiation pressure, dielectric materials also exhibit strain-dependent refractive index changes, through which optical fields can induce electrostrictive forces. To date, little attention has been paid to the electrostrictive component of optical forces in high-index contrast waveguides. In this paper, we examine the magnitude, scaling, and spatial distribution of electrostrictive forces through analytical and numerical models, revealing that electrostrictive forces increase to large values in high index-contrast waveguides. Similar to radiation pressure, electrostrictive forces increase quadratically with the optical field. However, since electrostrictive forces are determined by the material photoelastic tensor , the sign of the electrostrictive force is highly material-dependent, resulting in cancellation with radiation pressure in some instances. Furthermore, our analysis reveals that the optical forces resulting from both radiation pressure and electrostriction can scale to remarkably high levels (i.e., greater than 10(4)(N/m(2))) for realistic guided powers. Additionally, even in simple rectangular waveguides, the magnitude and distribution of both forces can be engineered at the various boundaries of the waveguide system by choice of material system and geometry of the waveguide. This tailorability points towards novel and simple waveguide designs which enable selective excitation of elastic waves with desired symmetries through engineered stimulated Brillouin scattering processes in nanoscale waveguide systems.

The Casimir force between bodies in vacuum can be understood as arising from their interaction with an infinite number of fluctuating electromagnetic quantum vacuum modes, resulting in a complex dependence on the shape and material of the interacting objects. Becoming dominant at small separations, the force has a significant role in nanomechanics and object manipulation at the nanoscale, leading to a considerable interest in identifying structures where the Casimir interaction behaves significantly different from the well-known attractive force between parallel plates. Here we experimentally demonstrate that by nanostructuring one of the interacting metal surfaces at scales below the plasma wavelength, an unexpected regime in the Casimir force can be observed. Replacing a flat surface with a deep metallic lamellar grating with sub-100 nm features strongly suppresses the Casimir force and for large inter-surfaces separations reduces it beyond what would be expected by any existing theoretical prediction.

Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics.Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate PICs as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.Quantum key distribution (QKD) remains the only quantum-resistant method of sending secret information at a distance [1,2]. The first QKD system ever devised used polarization of photons to encode information [3,4]. QKD has since progressed rapidly to several deployed systems that can reach point-to-point secret key generation rates in the upwards of 100 kbps [5][6][7][8] and to other photonic degrees of freedom: time [9][10][11][12], frequency [13][14][15][16], phase [17], quadrature [18][19][20][21], and orbital angular momentum [22]. While polarization remains an attractive choice for free-space QKD due to its robustness against turbulence [23][24][25][26][27][28], polarization is commonly thought to be unstable for fiber-based QKD. For this reason, there has been a strong interest in translating the polarization QKD components into photonic integrated circuits (PICs), which provide a compact and phase-stable platform capable of correcting for polarization drifts in the channel. Recently, silicon-based polarization QKD transmitters were used for laboratory QKD demonstrations [29,30], but their performance advantage over standard telecommunication components has yet to be demonstrated. Here we report the first field tests using high-speed silicon photonics-based transmitter for polarization-encoded QKD.The silicon photonics platform allows for the integration of multiple high-speed photonic operations into a single compact circuit [31][32][33][34]. Operating at gigahertz bandwidth, a silicon photonics polarization QKD transmitter can correct for polarization drifts with typical millisecond time scales in a metropolitan-scale fiber link. Furthermore, silicon nanophotonic devices are compatible with the existing complementary metal-oxidesemiconductor (CMOS) processes that have enabled monolithic integration of photonics and electronics, possibly leading to future widespread utilization of QKD.The QKD transmitter demonstrated here is manufactured using a CMOS-compatible process. The trans-mitter combines a 10-Gbps Mach-Zehnder Modulator (MZM) with interleaved grating couplers, which convert the polarization of a photon in an optical fiber into the path the photon takes in the integrated circuit, and vice versa. The high-speed polarization control is enabled by electro-optic carrier depletion modulation withi...