Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multiscale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical-vapor-deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework, and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.

The Casimir force between bodies in vacuum can be understood as arising from their interaction with an infinite number of fluctuating electromagnetic quantum vacuum modes, resulting in a complex dependence on the shape and material of the interacting objects. Becoming dominant at small separations, the force has a significant role in nanomechanics and object manipulation at the nanoscale, leading to a considerable interest in identifying structures where the Casimir interaction behaves significantly different from the well-known attractive force between parallel plates. Here we experimentally demonstrate that by nanostructuring one of the interacting metal surfaces at scales below the plasma wavelength, an unexpected regime in the Casimir force can be observed. Replacing a flat surface with a deep metallic lamellar grating with sub-100 nm features strongly suppresses the Casimir force and for large inter-surfaces separations reduces it beyond what would be expected by any existing theoretical prediction.

In the recent years, metasurfaces, being flat and lightweight, have been designed to replace bulky optical components with various functions. We demonstrate a monolithic Micro-Electro-Mechanical System (MEMS) integrated with a metasurface-based flat lens that focuses light in the mid-infrared spectrum. A two-dimensional scanning MEMS platform controls the angle of the lens along the two orthogonal axes (tip-tilt) by ±9 degrees, thus enabling dynamic beam steering. The device can compensate for off-axis incident light and thus correct for aberrations such as coma. We show that for low angular displacements, the integrated lens-on-MEMS system does not affect the mechanical performance of the MEMS actuators and preserves the focused beam profile as well as the measured full width at half maximum. We envision a new class of flat optical devices with active control provided by the combination of metasurfaces and MEMS for a wide range of applications, such as miniaturized MEMS-based microscope systems, LIDAR scanners, and projection systems.

Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems.

A method is introduced for Cu bottom-up filling at trenches with dimensions similar to those of through silicon via in the presence of three organic additives. The electrodeposition is galvanostatically conducted, and the potential-time curves during the gap-filling and the evolution of deposition profiles according to the deposition time are investigated to clarify the mechanism of the Cu bottom-up filling. The role of each organic additive is examined by electrochemical analyses and the gap-filling profiles with various combinations of organic additives. Based on the results, the gap-filling mechanism regarding the surface coverages of organic additives is suggested. The bottom-up filling of Cu is achieved with the establishment of growing surface at the bottom of trench via the accumulation of accelerator and the strong obstruction of Cu reduction at the side wall and top surface by inhibiting adsorbates. Trenches with 40 μm depth and widths of 6 or 8 μm are filled using the suggested mechanism within 15 min.