The electron-positron collider KEKB, working as a B-factory,
in Tsukuba (Japan), is currently being upgraded to the SuperKEKB
collider that will operate at the record luminosity of 8 × 1035 cm−2 s−1. Consequently, a major upgrade of the
Belle detector is needed, namely Belle II. The main novelty
involving the vertex detector (VXD) is the introduction of two pixel
detector (PXD) layers between the beampipe and the four layers of
double sided silicon strip detectors (DSSD) of the Silicon Vertex
Detector (SVD). Depleted p-channel FET (DEPFET) sensors organized
in a matrix represent an optimal choice for the realization of the
Belle II PXD. In this paper current developments carried out at
the Semiconductor Laboratory of the Max Planck Society, involving a
prototype of the PXD sensor, PXD6, and a parallel development of the
PXD metallization technology, called the Electrical Multi-Chip
Module (EMCM), are described.
The Belle II detector is a system currently under upgrade at the B-factory SuperKEKB in Tsukuba, Japan. The main novelty is the introduction of an additional position sensitive subdetector in the vertex detector, between the beam pipe and the strip detector system. The sensor of choice for the Belle II Pixel Detector is the Depleted p-channel Field Effect Transistor (DEPFET) sensor. In this paper the latest production of sensors and prototypes performed at the semiconductor Laboratory of the Max Planck Society, i.e. the PXD9 and the Electrical Multi-Chip Module (EMCM), are described. Wafer-level characterisation methods and techniques for faults in the metal system are also reported.
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