We compared the angular alignment tolerance and the tuning range of a novel interference-filter-tuned semiconductor external-cavity laser based on a degenerate resonator with characteristics similar to those of a conventional grating-tuned external-cavity laser using a 1300-nm In GaAsP Fabry-Perot laser with an antireflection-coated facet as the gain medium. The interference-filter cavity had a 260-fold greater alignment tolerance (+/-26 versus +/-0.1 mrad) and nearly the same tuning range (90 versus 110 nm) as the grating-tuned cavity.
Raman microprobe measurements of stress have been performed on a laser-recrystallized, seeded, lateral epitaxial silicon film on an oxidized silicon wafer. The direction-averaged, planar tensile stress increased from 2×109 dyn/cm2 in the seed region to 5×109 dyn/cm2 in the silicon-on-insulator region at distances greater than 20 μm from the seed/silicon-on-insulator boundary. Grain-boundary nucleation observed by optical Nomarski microscopy occurred approximately 11 μm from the seed edge in this film. Depth variations of the stress were observed by comparing measurements using 457-nm and 514.5-nm excitation wavelengths.
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