1994
DOI: 10.1109/3.299486
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Axial-mode instability in tunable external-cavity semiconductor lasers

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Cited by 55 publications
(19 citation statements)
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“…In tendency, it was found that the transition between different EC-modes (with the same or a different polarization) could be understood by a preference for the mode with the lowest losses and hence highest intensity. Within the current intervals where one of the polarization modes is dominating, some regularities of the VCSEL behavior are similar to those for edge-emitting semiconductor lasers (see for example [6][7][8][9][10][11][12]). However, the abrupt switch-on at threshold obtained in the present work were not demonstrated for those lasers, possibly, since it is difficult to realize such a strong feedback in edge-emitting lasers.…”
Section: Discussionmentioning
confidence: 91%
“…In tendency, it was found that the transition between different EC-modes (with the same or a different polarization) could be understood by a preference for the mode with the lowest losses and hence highest intensity. Within the current intervals where one of the polarization modes is dominating, some regularities of the VCSEL behavior are similar to those for edge-emitting semiconductor lasers (see for example [6][7][8][9][10][11][12]). However, the abrupt switch-on at threshold obtained in the present work were not demonstrated for those lasers, possibly, since it is difficult to realize such a strong feedback in edge-emitting lasers.…”
Section: Discussionmentioning
confidence: 91%
“…This loss reduction can overcompensate the gain reduction and it was argued to provide a mechanism to amplify fluctuations and multilongitudinal mode operation. The possibility of regular, slightly anharmonic oscillations with FSF was noticed [77]. Four wave mixing mediated by phase-amplitude coupling will also contribute to phase locking as noted before for semiconductor lasers without a saturable absorber section [80,81], soliton formation in dielectric microcavities [82], and dissipative parametric instabilities [83].…”
Section: Prl 118 044102 (2017) P H Y S I C a L R E V I E W L E T T Ementioning
confidence: 53%
“…Looking for the nonlinear mechanisms destabilizing the cw solution, it was realized already some time ago [77,78] that a mechanism for nonlinear loss saturation providing passive mode locking [3], might be at work in semiconductor lasers with FSF due to the strong phaseamplitude coupling [79]. A reduction of carrier density leads to an increase in refractive index which shifts the resonance of the VCSEL further into resonance with the VBG thus reducing losses.…”
Section: Prl 118 044102 (2017) P H Y S I C a L R E V I E W L E T T Ementioning
confidence: 99%
“…Based on the complex field rate-equations, one can calculate the allowed maximum front facet reflection R f [24]. As the approximate result, R f has to be smaller than R ext , divided by the so-called linewidth-enhancement factor α [19], the latter being a semiconductor material property 1 ,…”
Section: Gain Sectionmentioning
confidence: 99%