Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering

Zorabedian, P.; Adar, Fran

doi:10.1063/1.94271

Cited by 57 publications

(7 citation statements)

References 14 publications

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“…This behavior can be interpreted as gradual reduction of tensile stress caused in crystalline form of silicon by interaction with dioxide layer. The asymptotic position 520.65 cm −1 is equal to the mean value of maximum position of one-phonon Si line calculated from data reported in the literature [4,45,50,59,60]. As reported in the literature values of maximum position of one-phonon line observed for crystalline silicon are placed in the range between 520.3 cm −1 and 521 cm −1 .…”

Section: Journal Of Spectroscopy 11supporting

confidence: 54%

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Borowicz

2016

Journal of Spectroscopy

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Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorption depth of excitation light into the semiconductor substrate is discussed. The changes of the absorption depth of visible light allows to obtain Raman signal from places in the substrate placed at different distances from the dielectric/semiconductor interface. The series of Raman spectra obtained from visible excitation in the case of varying absorption depth allowed to analyze the structure of the substrate as a function of distance from the interface. Deep ultraviolet Raman study regarding part of silicon dioxide layer placed directly at the interface is not discussed so far which makes the analysis of the structure of this part of dielectric layer possible. Comparison of reported in this work Raman data with structure of silicon/silicon dioxide interface obtained from other experimental techniques proves the applicability of proposed methodology.

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Section: Journal Of Spectroscopy 11supporting

confidence: 54%

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Borowicz

2016

Journal of Spectroscopy

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“…When a lattice is strained under an applied stress, the energy levels of its electronic and vibrational states are modified, which affects the transition energies and causes slight shifts in frequency as a function of stress [49][50][51][52]. Raman spectroscopy is capable of measuring residual stresses and has been used extensively for this purpose in semiconductors [53][54][55].…”

Section: Residual Stress Measurements Using Raman and Fluorescence Spmentioning

confidence: 99%

Internal residual stresses in glass-ceramics: A review

Serbena

Zanotto

2012

Journal of Non-Crystalline Solids

138

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“…On cooling, large thermal stresses are introduced into the SOI layer because of the large difference between the thermal contractions of the silicon and SiO 2 layers. 4,5 The thermal stresses induced near the interface region on cooling may be partially relaxed by the further increase in defects. However, the tensile stress remains constant in regions far from the interface due to the pinning effect of surrounding silicon.…”

Section: ͑2͒mentioning

confidence: 99%

Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on SiO2 insulators

Mizoguchi

Nakashima

Sugiura

et al. 1999

Journal of Applied Physics

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The crystallinity of laser-recrystallized Si films on insulators ͑SOI films͒ was characterized by micro-Raman imaging. A small-angle bevel made by angle lapping of the SOI film was used to probe the structure at different depths. The Raman signals that varied with the position along the tilt show that interference of both the incident and scattered light induced in the angle-lapped specimens results in periodic enhancements in the intensity as a function of film thickness. An analysis of the fringe patterns in the Raman images provides us with depth profiles of strain and structural disorders with a high depth resolution on a scale of a few tens of nanometers. When moving away from the interface between the silicon film and the insulator, the peak frequency of the polycrystalline silicon band shifts to the lower frequency side and the band width becomes smaller. The depth profile of the Raman feature shows that the defect density is high in the region near the interface of Si and SiO 2 , and that the stress increases toward the top surface of the silicon film. Moreover, a partial relaxation of the stress occurs near the interface region due to the generation of a high density of defects.

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Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering

Cited by 57 publications

References 14 publications

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Internal residual stresses in glass-ceramics: A review

Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on SiO2 insulators

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