The present paper is aimed to the exploration of acousto-optic (AO) modulational amplification in ion implanted semiconductors. The AO modulational process has been treated as a four wave parametric mixing process and the effective third-order acousto-optic susceptibility characterizing the instability process has been deduced. By considering that the origin of modulational interaction lies in the third order AO susceptibility arising from the nonlinear induced current density and using the coupled mode theory, an analytical investigation of an intense laser beam in a strain dependent dielectric constant (SDDC) semiconductor crystal is presented. We found a significant change in threshold and gain characteristics with changes in charge imbalance parameter. The presence of colloidal grains (CGs) plays an effective role in changing the threshold intensity and effective gain constant.
We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10 −14 -10 −12 m 2 •V −2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.
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