The annealing kinetics of stress-induced leakage current in ultrathin SiO2 has been quantitatively investigated after high temperature bakes. We have found that the defects at the origin of the stress induced-leakage current can be fully annihilated and that it is possible to generate and anneal them several times without deterioration of the oxide quality. Moreover, the activation energy and diffusion coefficient deduced from the recovery time constant of the annealing kinetics are found nearly independent of the oxide thickness.
Low voltage operation in s u b -0 . 2 5~ requires the simultaneous integration of all components on a single chiphigh performance, low leakage and mixed-signal componentsis crucial. In this paper we present the successful integration of a low leakage gate-dielectric using a triple-gateoxide process with 16&24&52A, a low-k BEOL and mixed signal components. The 1.5V S U M cell
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