Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy J. Appl. Phys. 111, 103518 (2012) Modeling of carrier lifetimes in uniaxially strained GaAs J. Appl. Phys. 111, 103704 (2012) Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence J. Appl. Phys. 111, 104302 (2012) The role of glass-viscosity on the growth of semiconductor quantum dots in glass matrices
Cyclic ether derivatives of parthenolide were synthesized by using two cyclization strategies, relying on 2-(silyloxy) allylboration. Characterization for tubulin carboxypeptidase inhibition generated new insights into structure–activity relationships.
Low-strained AlInN/GaN multilayers aimed as Bragg mirrors were grown by metal organic vapour phase epitaxy on GaN/Si(1 1 1). In such structures the upper AlInN/GaN interfaces show a considerable roughening on a nanometre scale whereas the lower ones appear flat as evaluated by cross-sectional electron and transmission electron microscopy. The roughening is attributed to a Stranski-Krastanov transition from two-dimensional layer-by-layer to three-dimensional island growth. In addition, a self-organized wavy-like surface morphology on a micrometre scale is observed in such structures which we discuss in terms of Grinfeld instability.
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