Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

Romero, M. F.; Feneberg, Martin; Moser, P.; Berger, Christoph; Bläsing, J.; Dadgar, A.; Krost, A.; Sakalauskas, E.; Goldhahn, R.

doi:10.1063/1.4720087

Cited by 12 publications

(8 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, to confirm the transition is solely dependent upon the bandgap phenomenon, lowtemperature PL and IV measurements were carried out. The temperaturedependent bandgap shifting in GaN found in PL measurement, as shown in Figure 20, matches with previously published results [69]. Low-temperature 200-K and 100-K ISB absorption measurements were also carried out.…”

Section: Sr No Discrimination Isbt From Other Mechanismsupporting

confidence: 88%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

View full text Add to dashboard Cite

Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

show abstract

Section: Sr No Discrimination Isbt From Other Mechanismsupporting

confidence: 88%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

View full text Add to dashboard Cite

show abstract

“…13 The strong advantage of In x Al 1-x N is a spontaneous high charges polarization leading to an extremely high carrier density in the two-dimension electron gas (2DEG), up to 3.5 × 10 13 cm −2 , which cannot be achieved with traditional AlGaN/GaN structures. [14][15][16][17] Besides, the near lattice matched composition with GaN is achieved for x = 0.17-0.20, leading to a strain-free heterojunction which drastically reduces the structural defects. 8,18,19 The main difficulty resides in making a high crystalline quality and a good homogeneity of In-AlN layers, 20,21 InN and AlN suffering from a large difference of covalent bond, resulting from phase separation and strong spinodal decomposition.…”

mentioning

confidence: 99%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d 5/2 , N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O 2 annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N 2 molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950 • C) and its stability over time is finally discussed. N 2 molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850 • C are recommended to preserve the barrier chemical integrity.

show abstract

“…An optical interface emission (called the H -band) has been observed in AlGaAs/GaAs 12 and AlGaN/GaN 13 – 15 single heterostructures at low temperatures (T < 20 K), which has been attributed to radiative recombination between photoexcited holes and electrons confined at the interface. Similarly, due to its large band offset and strong strain induced piezoelectric field, the MgZnO/ZnO interface is expected to produce a 2DEG and an associated H -band emission that is more robust at higher temperatures because of the high exciton binding energy in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Choi

Rogers²,

Sandana³

et al. 2017

Sci Rep

View full text Add to dashboard Cite

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.

show abstract

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

Cited by 12 publications

References 26 publications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Contact Info

Product

Resources

About