In this paper we review our recent progress in a still young type of active waveguides based on hybrid organic (polymer)—inorganic (semiconductor quantum dots) materials. They can be useful for the implementation of new photonic devices, because combining the properties of the semiconductor nanostructures (quantum size carrier confinement and temperature independent emission) with the technological capabilities of polymers. These optical waveguides can be easily fabricated by spin-coating and UV photolithography on many substrates (SiO2/Si, in the present work). We demonstrate that it is possible to control the active wavelength in a broad range (400–1100 nm), just by changing the base quantum dot material (CdS, CdSe, CdTe and PbS, but other are possible), without the necessity of changing fabrication conditions. Particularly, we have determined the optimum conditions to produce multi-color photoluminescence waveguiding by embedding CdS, CdSe and CdTe quantum dots into Poly(methyl methacrylate). Finally, we show new results regarding the incorporation of CdSe nanocrystals into a SU-8 resist, in order to extrapolate the study to a photolithographic and technologically more important polymer. In this case ridge waveguides are able to confine in 2D the light emitted by the quantum dots.
Here we investigate an optical counterpart of the quantum Hanle effect. By employing the concepts of nonhermitian quantum mechanics 7,8 , we have designed an artificial plasmonic "atom" which has a pair of degenerate resonances that split by 3 broken time-reversal symmetry due to the presence of loss. This is a complete optical analogue of the atomic system where initially degenerate atomic states are split when the time-reversal symmetry is broken by the magnetic field 1 . Twodimensional (2D) arrays of these particles can form a new artificial material (metamaterial) with extremely efficient optical activity.Metamaterials provide vast opportunities to manipulate light beams in an uncommon way 11 , promising a wide range of potential applications such as cloaking 12,13 and perfect lensing 14 based on negative index of refraction. In the optical range, the properties of metamaterials rely on plasmonic effects 11 . In this work we will employ the localized surface plasmon (LSP) resonances supported by metal nanoparticles made of noble metals 15 . These resonances are solely determined by the particle's shape and surrounding environment and can be engineered and tuned to the desired frequency [16][17][18] .The basic scheme of the Hanle effect is represented in Fig. 1(a-b). Linearly polarized light, being a superposition of left and right circular polarizations, excites coherently the p-orbitals of an atom, conserving the total angular momentum. The degeneracy between p-states [ Fig. 1(a)] could be removed by an applied static magnetic field [Fig 1(b)]. The excited p-states evolve in time with slightly dissimilar time constants, adding different phases for opposite circular polarizations and, as a consequence, resulting in polarization-unpreserved light scattering. The polarization of the scattered light depends then on the strength of the magnetic field. The plasmonic "atom level" diagram of our optical analogue is shown in Fig. 1(c-d)
We report on the in-situ polymerization of 3T with Cu(ClO4)2 inside several host polymers such as Novolak-based negative-tone photoresist, polystyrene (PS), poly(4-vinylphenol) (P4VP), poly(methyl methacrylate) (PMMA), and poly(4-vinylphenol)-co-(methyl methacrylate) (P4VP-co-MMA) to form an interpenetrating polymer network (IPN). Conducting IPN films in the order of 10–4–150 S/cm are obtained depending on the specific IPN composition. Moreover, the convenience of this synthetic approach has been demonstrated using a commercially available negative-tone photoresist based on Novolak as a host polymer. Novolak photoresist was properly formulated with 3T and Cu(ClO4)2 to preserve as far as possible the negative lithographic characteristics of Novolak-based photoresist and generate conductive micropatterns by means of UV lithography. The CP is in situ synthesized into the Novolak matrix by a postbake after the lithography process (exposure + development). The electrical conductivity of the patterned film is 10–2 S/cm. We accurately patterned three different types of microstructures with different resolutions: interdigitated structures with a width of 100 μm, 200 μm side squares, and a 20 μm wide cross. We believe this synthetic approach is of potential application to modify the conductivity of numerous insulating polymers while preserving their physical and chemical properties.
In this Letter, we study a new kind of organic polymer waveguide numerically and experimentally by combining an ultrathin (10-50 nm) layer of compactly packed CdSe/ZnS core/shell colloidal quantum dots (QDs) sandwiched between two cladding poly(methyl methacrylate) (PMMA) layers. When a pumping laser beam is coupled into the waveguide edge, light is mostly confined around the QD layer, improving the efficiency of excitation. Moreover, the absence of losses in the claddings allows the propagation of the pumping laser beam along the entire waveguide length; hence, a high-intensity photoluminescence (PL) is produced. Furthermore, a novel fabrication technology is developed to pattern the PMMA into ridge structures by UV lithography in order to provide additional light confinement. The sandwich-type waveguide is analyzed in comparison to a similar one formed by a PMMA film homogeneously doped by the same QDs. A 100-fold enhancement in the waveguided PL is found for the sandwich-type case due to the higher concentration of QDs inside the waveguide.
Charging of common resist materials during electron beam (e-beam) writing leads to deflection of the electron beam path, which can result in significant pattern displacement. Here we report a new conducting polymer to eliminate charging. A common approach is to place the conducting layer underneath the e-beam resist layer. Conductivity equal or greater than 10(-4) S cm(-1) has been reported to prevent pattern displacement. Some other properties such as a flat surface layer, chemical inertness and insolubility in both the top resist solvent and the developer are also necessary. The way to achieve all these properties consisted in synthesizing a conducting polymer inside an insulating polymer to form an interpenetrating polymer network (IPN) which could combine their properties. Novolak was used as the host polymer and terthiophene (3T) as the monomer to polymerize. Cu(ClO(4))(2) initiates simultaneously the oxidative polymerization of the 3T and its subsequent doping inside Novolak during the bake step in a one-step reaction. Solvent-resistant and homogeneous conducting films with smooth surfaces were achieved. The conductivity was of the order of 10(-2) S cm(-1). Patterning of the top resist was carried out without disturbing its lithographic performance.
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