The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ~100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DCmagnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent results were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented.
Phone: (800) 553-6847 Facsimile: (703) 605-6900 Online ordering: http://www.ntis.gov/ordering.htm Abstract Beam induced pressure rise in RHIC warm sections is one of the machine luminosity limits. The RHIC electron cloud and the beam transition pressure rise are discussed. Countermeasures and studies for RHIC pressure rise and RHIC upgrade are reported.
The stainless steel vacuum chambers of the 248 m accumulator ring of the Spallation Neutron Source are to be coated with ∼100 nm of titanium nitride (TiN). This is to minimize the secondary electron yield from the chamber wall, and thus avoid the so-called e–p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Reports in the literature suggest that a TiN coating, by acting as a hydrogen permeation barrier, may also reduce the ultimate outgassing rate. The outgassing rate of TiN coated chambers deposited at various sputtering pressures was measured and compared to uncoated chambers, both with and without 250 °C in situ bake. Some coated chambers were subjected to glow discharge treatment (GDT). It was found that the surface roughness, analyzed with a scanning electron microscope, depends on the deposition pressure and is also influenced by GDT. The outgassing rate varies as a function of the surface roughness of the TiN layer, with rougher coatings more hydroscopic in nature. The in situ postbake outgassing rate was reduced ∼30% for a chamber coated with TiN at low pressure and subsequently subjected to GDT, thus giving evidence that the TiN layer acts as a permeation barrier to hydrogen diffusion. It was also found that a 450 °C vacuum degas reduced the hydrogen outgassing rate one order of magnitude, although the amount of reduction does not agree with the value predicted by standard diffusion equations.
In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.
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