The primary requirement for the development of tools for extreme ultraviolet lithography (EUVL) has been the identification and optimization of suitable sources. These sources must be capable of producing hundreds of watts of extreme ultraviolet (EUV) radiation within a wavelength bandwidth of 2% centred on 13.5 nm, based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ∼70% at this wavelength. Since, with the exception of large scale facilities, such as free electron lasers, such radiation is only emitted from plasmas containing moderately to highly charged ions, the source development prompted a large volume of studies of laser produced and discharge plasmas in order to identify which ions were the strongest emitters at this wavelength and the plasma conditions under which their emission was optimized. It quickly emerged that transitions of the type 4p64dn − 4p54dn+1 + 4dn−14f in the spectra of Sn IX to SnXIV were the best candidates and work is still ongoing to establish the plasma conditions under which their emission at 13.5 nm is maximized. In addition, development of other sources at 6.X nm, where X ∼ 0.7, has been identified as the wavelength of choice for so-called Beyond EUVL (BEUVL), based on the availability of La/B based MLMs, with theoretical reflectance approaching 80% at this wavelength. Laser produced plasmas of Gd and Tb have been identified as potential source elements, as n = 4 − n = 4 transitions in their ions emit strongly near this wavelength. However to date, the highest conversion efficiency (CE) obtained, for laser to BEUV energy emitted within the 0.6% wavelength bandwidth of the available mirrors is only 0.8%, compared with values of 5% for the 2% bandwidth relevant for the Mo/Si mirrors at 13.5 nm. This suggests a need to identify other potential sources or the selection of other wavelengths for BEUVL. This review deals with the atomic physics of the highly-charged ions relevant to EUV emission at these wavelengths. It considers the developments that have contributed to the realization of the 5% CE at 13.5 nm which underpins the production of high-volume lithography tools, and those that will be required to realize BEUV lithography.
Two-color multiphoton ionization of atomic helium was investigated by combining extreme ultraviolet (XUV) radiation from the Free Electron Laser in Hamburg with an intense synchronized optical laser. In the photoelectron spectrum, lines associated with direct ionization and above-threshold ionization show strong variations of their amplitudes as a function of both the intensity of the optical dressing field and the relative orientation of the linear polarization vectors of the two fields. The polarization dependence provides direct insight into the symmetry of the outgoing electrons in above-threshold ionization. In the high field regime, the monochromaticity of the XUV radiation enables the unperturbed observation of nonlinear processes in the optical field. DOI: 10.1103/PhysRevLett.101.193002 PACS numbers: 32.80.Fb, 32.80.Rm Multiphoton single-color ionization in intense optical or infrared laser fields has been the subject of multiple experimental and theoretical studies for more than two decades and is by now a very well understood process (e.g., [1]). The extension of these studies to multiphoton absorption in the photoionization continuum was followed by the discovery that high order harmonics of the fundamental laser frequency are emitted in the extreme ultraviolet (XUV) when a strong femtosecond optical laser pulse interacts with a gas jet (e.g., [2,3]). The combination of different wavelengths, one in the XUV and the other in the visible or near infrared, opens new opportunities. It has recently permitted the investigation of above-threshold ionization (ATI) as the result of the combined interaction of both fields [4][5][6]. In this case the dominant contribution comes from processes in the course of which the emitted electron exchanges photons with the dressing laser field via stimulated emission (or absorption) resulting in a comb of sidebands disposed on both sides of the main photoelectron line.Theoretical studies have established that the sideband intensity depends on the electron kinetic energy as well as on the strength and polarization state of the optical laser field [7]. Fitting theoretical profiles to the measured sideband signals should yield the main parameters which govern the photon-atom interaction in this regime. For example, changing the polarization of either of the radiation beams gives rise to ''dichroic effects'' in the photoelectron spectrum. It therefore opens the possibility to control the relative contributions of photoionization channels with different angular momenta.This approach has been extensively used in studies of atomic ionization by weak monochromatic radiation from synchrotrons and continuous lasers, where at least one resonant intermediate state is involved, and the basic photon-electron interaction is completely dominated by this resonant excitation [8]. The use of high harmonic XUV sources to generate similar processes in the nonresonant continuum is complicated by very difficult analysis, since contributions from several harmonics and their mutual interferenc...
An examination of the influence of target composition and viewing angle on the extreme ultraviolet spectra of laser produced plasmas formed from tin and tin doped planar targets is reported. Spectra have been recorded in the 9–17nm region from plasmas created by a 700mJ, 15ns full width at half maximum intensity, 1064nm Nd:YAG laser pulse using an absolutely calibrated 0.25m grazing incidence vacuum spectrograph. The influence of absorption by tin ions (SnI–SnX) in the plasma is clearly seen in the shape of the peak feature at 13.5nm, while the density of tin ions in the target is also seen to influence the level of radiation in the 9–17nm region.
One key aspect in the drive to optimize the radiative output of a laser-produced plasma for extreme ultraviolet lithography is the radiation transport through the plasma. In tin-based plasmas, the radiation in the 2% bandwidth at 13.5 nm is predominantly due to 4d-4f and 4p-4d transitions from a range of tin ions (Sn7+ to Sn12+). The complexity of the configurations involved in these transitions is such that a line-by-line analysis is, computationally, extremely intensive. This work seeks to model the emission profiles of each ion by treating the transition arrays statistically, thus greatly simplifying radiation transport modeling. The results of the model are compared with experimental spectra from tin-based laser-produced plasmas.
Extreme ultraviolet lithography requires a light source at 13.5nm to match the proposed multilayer optics reflectivity. The impact of wavelength and power density on the ion distribution and electron temperature in a laser-produced plasma is calculated for Nd:YAG and CO2 lasers. A steady-state figure of merit, calculated to optimize emission as a function of laser wavelength, shows an increase with a CO2 laser. The influence of reduced electron density in the CO2 laser-produced plasma is considered in a one-dimensional radiation transport model, where a more than twofold increase in conversion efficiency over that attainable with the Nd:YAG is predicted.
Abstract. We present a systematic study of the photoionization of noble gas atoms exposed simultaneously to ultrashort (20 fs) monochromatic (1-2% spectral width) extreme ultraviolet (XUV) radiation from the Free-electron Laser in Hamburg (FLASH) and to intense synchronized near-infrared (NIR) laser pulses with intensities up to about 10 13 W cm −2 . Already at modest intensities of the NIR dressing field, the XUV-induced photoionization lines are split into a sequence of peaks due to the emission or absorption of several additional infrared photons. We observed a plateau-shaped envelope of the resulting sequence of sidebands that broadens with increasing intensity of the NIR dressing field. All individual lines of the nonlinear two-color ionization process are Stark-shifted, reflecting the effective intensity of the NIR field. The intensity-dependent cutoff energies of the sideband plateau are in good agreement with a classical model. The detailed structure of the two-color spectra, including the formation of individual sidebands, the Stark shifts and the contributions beyond the 6 Author to whom any correspondence should be addressed.
Using a noninvasive, electro-optically based electron bunch arrival time measurement at FLASH ͑free electron laser in Hamburg͒ the temporal resolution of two-color pump-probe experiments has been significantly improved. The system determines the relative arrival time of the extended ultraviolet pulse of FLASH and an amplified Ti:sapphire femtosecond-laser pulse at the interaction region better than 90 fs rms. In a benchmarking pump-probe experiment using two-color above threshold ionization of noble gases, an enhancement in the timing resolution by a factor of 4 compared to the uncorrected data is obtained. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3111789͔Progress in generation and application of ultrashort laser pulses over the past two decades has been tremendous. Efforts toward decreasing the pulse duration and the concomitant widening of the spectral range are steadily increasing, thereby enabling the investigation of dynamical phenomena on faster and faster timescales. At FLASH ͑free electron laser in Hamburg͒, 1 in particular, investigations on the phenomena in the extended ultraviolet ͑XUV͒ regime with pulses of only few tens of femtoseconds are now possible, with a worldwide unrivalled high power such that a whole new class of experiments is accessible. The pump-probe excitation scheme is the most promising concept to study dynamical processes on the femtosecond level. Two ultrashort pulses are required for this kind of experiment, first, initiating a reaction and the second permitting the observation of the induced changes. The temporal resolution of this scheme is determined by precise knowledge of the delay between both pulses and, ultimately, by their duration. At FLASH the XUV-free electron laser ͑XUV-FEL͒ pulse can be combined with an optical laser pulse. This scheme has already been utilized from the beginning of its operation as a user facility in 2005 and has led to several exciting results, e.g., 2-6 two complementary laser systems are available. First, a system delivering a high energy pulse ͓Ͼ10 mJ, 120 fs full width at half maximum ͑FWHM͔͒, albeit the repetition rate is limited to 10 pulses per second. The second system provides trains of 20 J pulses ͑120 fs FWHM͒ that map exactly onto the complex timing pattern of the FEL, delivering up to 4000 pulses per second. Since the FEL and the optical laser are independent sources of femtosecond pulses the synchronization between both is of vital importance to perform well defined pump-probe experiments. However, due to technical limitations the synchronization is compromised by the inherent timing jitter reducing the effective temporal resolution from the pulse duration limit of 120 fs ͑FWHMӍ 50 fs͒ root mean square ͑rms͒ width ͑since the FEL pulse has a pulse duration of only few tens of femtoseconds͒ to about 250 fs rms. This jitter is dominated by the accelerator itself. Our approach to increase the temporal resolution is to measure the arrival time of the pulses during a pump-probe experiment independently and shot by shot without ...
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