Intrinsic strain softening appears to be the main cause for the occurrence of plastic localization phenomena in deformation of glassy polymers. This is supported by the homogeneous plastic deformation behavior that is observed in polycarbonate samples that have been mechanically pretreated to remove (saturate) the strain softening effect. In this study, some experimental results are presented and a numerical analysis is performed simulating the effect of mechanical conditioning by cyclic torsion on the subsequent deformation of polycarbonate. To facilitate the numerical analysis of the “mechanical rejuvenation” effect, a previously developed model, the “compressible Leonov model,” is extended to describe the phenomenological aspects of the large strain mechanical behavior of glassy polymers. The model covers common observable features, like strain rate, temperature and pressure dependent yield, and the subsequent strain softening and strain-hardening phenomena. The model, as presented in this study, is purely “single mode” (i.e., only one relaxation time is involved), and therefore it is not possible to capture the nonlinear viscoelastic pre-yield behavior accurately. The attention is particularly focused on the large strain phenomena. From the simulations it becomes clear that the preconditioning treatment removes the intrinsic softening effect, which leads to a more stable mode of deformation. [S0094-4289(00)01002-1]

Abstract. Stretchable electronics offer increased design freedom of electronic products. Typically, small rigid semiconductor islands are interconnected with thin metal conductor lines on top of, or encapsulated in, a highly compliant substrate, such as a rubber material. A key requirement is large stretchability, i.e. the ability to withstand large deformations during usage without any loss of functionality. Stretching induced delamination is one of the major failure modes that determines the amount of stretchability that can be achieved for a given interconnect design. During peel testing, performed to characterize the interface behaviour, the rubber is severely lifted at the delamination front while at the same time fibrillation of the rubber at the peel front is observed by ESEM analyses. The interface properties are established by combining the results of numerical simulations and peeling experiments at two distinct scales: the global force-displacement curves and local rubber lift geometries. The thus quantified parameters are used to predict the delamination behaviour of zigzag and horseshoe patterned interconnect structures. The accuracy of these finite element simulations is assessed by a comparison of the calculated evolution of the shape of the interconnect structures and the fibrillation areas during stretching with experimental results obtained by detailed in-situ analyses.

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One of the major issues during soft lithographic processes is that, if the pressing force on the stamp becomes too high, the stamp may erroneously come into contact with the substrate in zones where contact is not intended. This decreases the patterning accuracy and may lead to badly or nonperforming electronic devices and is therefore undesired. Design rules, available at an early stage in the design phase, are desired to speed-up the development of this technique. Ultimately, these rules should give an indication of the critical pressure that can safely be applied on the stamp thereby avoiding unwanted contact between the stamp and the substrate. To obtain these critical pressures, numerical analyses of the deformation behavior of two characteristic configurations in the microstructured surface pattern of the rubber stamp are performed. The deformation behavior of the rubber is modeled according to a Gaussian and a non-Gaussian approach, leading to a neo-Hookean and Arruda-Boyce constitutive model, respectively. Besides these material nonlinearities, geometrical nonlinearities are taken into account as well. The calculated pressure at which undesired contact takes place (the roof collapse pressure) is compared to experimentally obtained values for two particular types of structures, and the results are in agreement within the error margins of the experiments and those ensuing from the assumptions of the numerical simulations.

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a b s t r a c tThe crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and thin polyimide (PI) films was investigated using tensile experiments carried out in situ in an optical microscope. Cracks initiated first within the SiO 2 insulator layer for both types of substrates. The COS was found to be equal to 1.15% and 0.24% for steel and PI, respectively. The influence of loading direction on failure of the TFT stack with anisotropic geometry was moreover found to be considerable, leading to recommendations for backplane design. The large difference in critical strain of the SiO 2 layer on the two substrates was analyzed using an energy release rate approach, and found to result from differences in layer/substrate mechanical contrast and in internal stress state. Based on this analysis a correlation between layer/substrate elastic contrast and tensile failure behavior was devised.

In this work, the crack driving force for a tunnelling crack in a thin brittle layer confined by dissimilar thick, and more compliant, elastic layers is considered at tensile loading. The steady-state energy release rate is evaluated using distributed dislocation technique and series representation of the complex potentials for an isotropic trimaterial. Evolution of the energy release rate with the crack length is studied by means of FEM. The 3D FEM simulations for tunnel cracks suggest that the ERR can represented by a universal relation (mastercurve) in suitably normalised co-ordinates. An analytical approximation of the ERR mastercurve is obtained as a function of crack length, cracking layer thickness, and a non-dimensional steady-state ERR.

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