A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 ym CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF/pm2 capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.
We describe an advanced 0.13pm CMOS technology platform optimized for density, performance, low power and analoghixed signal applications. Up to 8 levels of Copper interconnect with industries first true low-k dielectric (SiLK, k=2.7) [ l ] result in superior interconnect performance at aggressive pitches. A 2.28pm2 SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated.
References(1) R. D. Goldblatt et al.: A High Performance 0.13 pm Copper BEOL Technology with Low-k Dielectric, IlTC 2000 (2) L.K. Han et al: A Modular 0.13pm BULK CMOS Technology for High performance and Low Power Applications, VLSI 2000, p. 12 (3) M. Armacost et al: A High Reliability Metal Insulator Metal Capacitor for 0,18 pm Copper Technology, IEDM 2000, p. 157 SiLK is a registixed trademark of The Dow Chemical Company 101 4-891 14-012-7/01 2001 Symposium on VLSI Technology Digest of Technical Papers
The cathode phenomena during the conduction phase of a pseudospark discharge are investigated with different cathode materials: Cu, Mo, Ni, Ta, and W/Re. The discharge gas was hydrogen with a gas pressure of 40 Pa. At a pulse duration of 2.7 μs and a maximum current of 9 kA, i.e., at a transferred charge of 11 mC/discharge, mass erosion rates of the cathode materials showed no significant material dependence after 106 discharges. Fast framing photography (end-on, exposure time: 5 ns) of the light emission from the cathode surface revealed several small spots simultaneously, distributed over a cathode surface of 1 cm2. The distribution of metal and hydrogen spectral lines at the cathode surface and in the gap were compared. Metal lines are localized on the cathode surface, whereas the hydrogen Balmer β-line is diffuse over the electrodes surfaces and the gap. Polished electrodes showed, after a single pulse, about 107 craters with 0.5–5 μm in diameter. This is leading to a local current density of about 108 A/cm2 in a single crater.
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