We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.

First demonstration of cross phase modulation based interferometric switch is presented in silicon on insulator waveguides. By using Mach-Zehnder interferometric configuration we experimentally demonstrate switching of CW signal ~25 nm away from the pump laser. We present the effect of free carrier accumulation on switching. Additionally, we theoretically analyze the transient effects and degradations due to free carrier absorption, free carrier refraction and two photon absorption effects. Results suggest that at low peak power levels the system is governed by Kerr nonlinearities. As the input power levels increase the free carrier effects becomes dominant. Effect of free carrier generation on continuum generation and power transfer also theoretically analyzed and spectral broadening factor for high input power levels is estimated.

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The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm(2) peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

We propose a design of a dielectric (silicon nitride) optical leaky wave antenna (OLWA) with periodic semiconductor (silicon) corrugations, capable of producing narrow beam radiation. The optical antenna radiates a narrow beam because a leaky wave (LW) with low attenuation constant is excited at one end of the corrugated dielectric waveguide. We show that pointing angle, beam-width, and operational frequency are all related to the LW complex wavenumber, whose value depends on the amount of silicon perturbations in the waveguide. In this paper, the propagation constant and the attenuation coefficient of the LW in the periodic structure are extracted from full-wave simulations. The far-field radiation patterns in both glass and air environments predicted by LW theory agree well with the ones obtained by full-wave simulations. We achieve a directive radiation pattern in glass environment with about 17.5 dB directivity and 1.05 degree beam-width at the operative free space wavelength of 1.55 μm, pointing at a direction orthogonal to the waveguide (broadside direction). We also show that the use of semiconductor corrugations facilitate electronic tuning of the radiation pattern via carrier injection.

We demonstrate a single-shot digitizer with a 10 Tsample/ s sampling rate. This feat is accomplished with a photonic time stretch preprocessor that slows down the electrical waveform by an unprecedented factor of 250 before it is captured by a commercial electronic digitizer. To achieve such a large stretch factor, distributed Raman optical amplification is realized inside the dispersive element that performs the time stretch.

The first Raman laser with intra-cavity electronic switching is demonstrated. Digital control of intra-cavity gain is attained by using a diode gain cavity. In contrast to traditional Raman lasers, the Raman laser reported here is made from pure silicon and can be directly modulated to transmit data. Room temperature operation with 2.5W peak laser output power is demonstrated.

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