Self-phase-modulation induced spectral broadening in silicon waveguides

Boyraz, Özdal; Indukuri, Tejaswi; Jalali, Bahram

doi:10.1364/opex.12.000829

Cited by 145 publications

(90 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Because of a relatively large value of γ 0 in silicon waveguides, L N can easily become 1 mm or less at moderate peak power levels. As a result, the SPM-induced spectral broadening is frequently observed in short silicon waveguides [7][8][9][10][11][12]. Such spectral broadening has already been used to realize useful functions such as optical gating [10], regeneration [19] and multichannel spectral carving [18].…”

Section: Relative Magnitudes Of the Nonlinear And Free-carrier Effectsmentioning

confidence: 99%

“…These features enable efficient nonlinear interaction of optical waves at relatively low power levels inside a short SOI waveguide (<5 cm long). For this reason, considerable effort has been directed in recent years toward investigating the nonlinear phenomena such as self-phase modulation (SPM) [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23], cross-phase modulation (XPM) [14,[24][25][26], stimulated Raman scattering (SRS) , and four-wave mixing (FWM) [61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79]. All of these nonlinear effects are currently being explored to realize a variety of optical functions on the chip scale.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

820

693

View full text Add to dashboard Cite

Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrödinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band. 1678-1687 (2006). 4. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A: Pure Appl. Opt. 8, 840-848 (2006). 5. M. Dinu, F. Quochi, and H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys.Lett. 82, 2954-2956 (2003). 6. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003). 7. H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, "Optical dispersion, two-photon absorption, and self-phase modulation in silicon waveguides at 1.5 μm wavelength," Appl. Phys. Lett. 80, 416-418 (2002 3685-3697 (1973). 109. T. R. Hart, R. L. Aggarwal, and B. Lax, "Temperature dependence of Raman scattering in silicon," Phys. Rev. B 1, 638-642 (1970). 110. A. Zwick and R. Carles, "Multiple-order Raman scattering in crystalline and amorphous silicon," Phys. Rev. B 48, 6024-6032 (1993). 111. R. Loudon, "The Raman effect in crystals," Adv. Phys. 50, 813-864 (2001). 112. J. R. Sandercock, "Brillouin-scattering measurements on silicon and germanium," Phys. Rev. Lett. 28, 237-240 (1972). 113. M. Dinu, "Dispersion of phonon-assisted nonresonant third-order nonlinearities," IEEE J. Quantum Electron.39, 1498-1503 (2003).

show abstract

Section: Relative Magnitudes Of the Nonlinear And Free-carrier Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

820

693

View full text Add to dashboard Cite

show abstract

“…These features enable efficient nonlinear phenomena to occur in the SOI waveguides. Many nonlinear effects, such as self-phase modulation (SPM) [11], cross-phase modulation (XPM) [12], fourwave mixing (FWM) and parametric amplification [2,3,8,13,14], twophoton absorption (TPA) [15], and stimulated Raman scattering (SRS) [16], have been demonstrated to efficiently occur with a relative low pump power in a short length of such waveguide. It opens a door for the SOI-based all-optical signal processing devices.…”

Section: Introductionmentioning

confidence: 99%

Optimal Design of a Silicon-on-Insulator Nanowire Waveguide for Broadband Wavelength Conversion

Zhang¹,

Gao²,

He³

2009

PIER

View full text Add to dashboard Cite

Abstract-The broadband wavelength conversion based on four-wave mixing in a silicon nanowire waveguide is theoretically investigated by taking into account the influence of the waveguide loss and free-carrier absorption on the phase-matched condition. The lossy wavelength conversion is compared with the lossless one in terms of conversion efficiency and bandwidth. The size of the silicon-oninsulator nanowire waveguide is optimized to be 400 nm × 269 nm for broadband wavelength conversion by realizing a flattened dispersion. The pump wavelength is also optimized to 1538.7 nm in order to further enhance the conversion bandwidth. A 3-dB conversion bandwidth of over 280 nm is achieved in the optimized waveguide with the optimized pump wavelength.

show abstract

“…Substantial progress has been achieved, e.g., in the field of Raman amplification, in both continuous-wave [2] and pulsed pump-probe [3,4] experiments. Further nonlinear effects like two-photon absorption (TPA) [5], self-phase modulation (SPM) [6][7][8], cross-phase modulation (XPM) and continuum generation [9], four-wave mixing (FWM) [10] and the Kerr effect [11] have also been successfully demonstrated and thoroughly investigated -typically on time scales ranging from the picosecond to the nanosecond regime. In detail, a careful analysis of self-phase modulation in submicron silicon waveguides was recently presented by Dulkeith et al [8].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

Dekker¹,

Driessen²,

Wahlbrink³

et al. 2006

Opt. Express

114

View full text Add to dashboard Cite

Abstract:The propagation of 300 femtosecond optical pulses in Silicon-on Insulator waveguides has been studied by means of a pump-probe set-up. The ultrafast pulses allowed the observation of large Kerr-induced red and blue shifts (9nm and 15nm, respectively) of the probe signal depending on the delay between pump (1554nm) and probe (1683nm) pulses. A numerical model taking into account the Kerr effect, Two Photon Absorption and Free Carrier Absorption is presented and provides good agreement with our experimental data and data in literature. A microring resonator based device is proposed that exploits the observed wavelength shift for sub-picosecond all-optical switching. ©2006 Optical Society of America O. Boyraz, P. Koonath, V. Raghunathan, and B. Jalali, "All optical switching and continuum generation in silicon waveguides," Opt. Express 12, 4094-4102 (2004

show abstract

Self-phase-modulation induced spectral broadening in silicon waveguides

Cited by 145 publications

References 3 publications

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Optimal Design of a Silicon-on-Insulator Nanowire Waveguide for Broadband Wavelength Conversion

Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

Contact Info

Product

Resources

About