Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

Dekker, R.; Driessen, A.; Wahlbrink, T.; Moormann, Christian; Niehusmann, J.; Först, Michael

doi:10.1364/oe.14.008336

Cited by 114 publications

(72 citation statements)

References 22 publications

(40 reference statements)

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“…As a result, we may expect that XPM inside a silicon waveguide should exhibit similar spectral characteristics. This indeed was observed recently by using femtosecond pulses [14,26]. In particular, the XPM-induced spectral asymmetry because of a pump-probe delay was seen clearly, and its features agreed with theory.…”

Section: Xpm and Cross Two-photon Absorptionsupporting

confidence: 87%

“…In many cases, a shift of the broadened spectrum toward shorter wavelengths was observed [8-10, 12, 14, 18, 19, 25]. Detailed numerical simulations show that this blue shift is caused by a free-carrier-induced chirp (FCC) that affects pulse dynamics on a different time scale [9,14,[20][21][22]25]. Equation (37) can be used to describe pulse propagation inside SOI waveguides under quite general conditions.…”

Section: Relative Magnitudes Of the Nonlinear And Free-carrier Effectsmentioning

confidence: 99%

“…These features enable efficient nonlinear interaction of optical waves at relatively low power levels inside a short SOI waveguide (<5 cm long). For this reason, considerable effort has been directed in recent years toward investigating the nonlinear phenomena such as self-phase modulation (SPM) [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23], cross-phase modulation (XPM) [14,[24][25][26], stimulated Raman scattering (SRS) , and four-wave mixing (FWM) [61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79]. All of these nonlinear effects are currently being explored to realize a variety of optical functions on the chip scale.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

822

699

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Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrödinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band. 1678-1687 (2006). 4. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A: Pure Appl. Opt. 8, 840-848 (2006). 5. M. Dinu, F. Quochi, and H. Garcia, "Third-order nonlinearities in silicon at telecom wavelengths," Appl. Phys.Lett. 82, 2954-2956 (2003). 6. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides," Opt. Express 11, 1731-1739 (2003). 7. H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, "Optical dispersion, two-photon absorption, and self-phase modulation in silicon waveguides at 1.5 μm wavelength," Appl. Phys. Lett. 80, 416-418 (2002 3685-3697 (1973). 109. T. R. Hart, R. L. Aggarwal, and B. Lax, "Temperature dependence of Raman scattering in silicon," Phys. Rev. B 1, 638-642 (1970). 110. A. Zwick and R. Carles, "Multiple-order Raman scattering in crystalline and amorphous silicon," Phys. Rev. B 48, 6024-6032 (1993). 111. R. Loudon, "The Raman effect in crystals," Adv. Phys. 50, 813-864 (2001). 112. J. R. Sandercock, "Brillouin-scattering measurements on silicon and germanium," Phys. Rev. Lett. 28, 237-240 (1972). 113. M. Dinu, "Dispersion of phonon-assisted nonresonant third-order nonlinearities," IEEE J. Quantum Electron.39, 1498-1503 (2003).

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Section: Xpm and Cross Two-photon Absorptionsupporting

confidence: 87%

Section: Relative Magnitudes Of the Nonlinear And Free-carrier Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Lin¹,

Painter²,

Agrawal³

2007

Opt. Express

822

699

View full text Add to dashboard Cite

show abstract

“…NRZ-to-RZ conversion [5], regeneration, multi-casting, multiplewavelength source, monitoring, demultiplexing and many more, see e.g. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Most of these demonstrations rely on ultrafast FWM or even two-photon absorption (TPA).…”

Section: Silicon Photonics For Optical Signal Processing -Backgroundmentioning

confidence: 99%

Ultrafast Nonlinear Signal Processing in Silicon Waveguides

Oxenløwe

Mulvad

et al. 2012

Optical Fiber Communication Conference

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“…from the UT used a different approach and were able to achieve sub-ps switching in a compact silicon waveguiding structure [see Fig. 2] 11 .…”

Section: Technical Aspects Of Ultrafast Communicationmentioning

confidence: 99%

Ethical Aspects of Research in Ultrafast Communication

Driessen

2009

The International Library of Ethics, Law and Technology

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This chapter summarizes the reflections of a scientist active in optical communication about the need of ethical considerations in technological research. An optimistic definition of ethics, being the art to make good use of technology, is proposed that emphasizes the necessarily involvement of not only technologists but also experts in humanity. The paper then reviews briefly the research activities of a Dutch national consortium where the author had been involved. This mainly academic research dealt with advanced approaches for ultrafast communication. In the next section an assessment is given of the potential impact of the technological results on society. In order to emphasize the positive aspects and counteract the negative ones, three steps are proposed: (i) create conditions for a dialogue between experts in ethics and technology; (ii) work out scenarios for the introduction of new techniques in society; (iii) anticipate opportunities and threats. Finally the conclusions are presented.

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Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

Cited by 114 publications

References 22 publications

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Nonlinear optical phenomena in silicon waveguides: modeling and applications

Ultrafast Nonlinear Signal Processing in Silicon Waveguides

Ethical Aspects of Research in Ultrafast Communication

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