A novel 12.7kV Sic SICGT (Sic Commutated Gate turn-off Thyristor) was developed for on-line uses in power utility applications, which has the highest blocking voltage among the reported semiconductor switching devices.Its leakage current is low and is less than 1 x A/cm2 at 9 kV and at 250°C . Its on-state voltage at 100 A/cmz is 6.6 V and is lower than that of a 9 kV Si GTO, which is composed of two 4.5 kV GTOs connected in series. Its turn-on time and turn-off time are 0 . 2 2 '~~ and 2.68 ps respectively, which are about 1/50 and 1/10 of a commercialized 6 kV 6 kA Si-GTO. PWh4 half bridge inverter composed of SICGTs demonstrated output voltage of fl.25 kV and output power of 0.8 kVA respectively, which are the highest values among the reported SIC half bridge inverters.
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