12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

Sugawara,; Takayama,; Asano,; Agarwal,; Ryu, Sei‐Hyung; Palmour,; Ogata,

doi:10.1109/wct.2004.240155

Cited by 30 publications

(16 citation statements)

References 2 publications

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“…Through recent progress in growth and device processing technology of SiC, highvoltage 4H-SiC Schottky barrier diodes and vertical junction field-effect transistors have been developed [3,4]. To realize SiC power devices with a blocking voltage higher than several kilovolts for very high-voltage applications such as electric power transmission, bipolar devices possess great promise in terms of lower on-resistance owing to the effect of conductivity modulation [5,6]. In such highvoltage power devices, a long carrier lifetime is required to modulate the conductivity of very thick voltage-blocking layers.…”

mentioning

confidence: 99%

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Kimoto

Danno

Suda

2008

Physica Status Solidi (b)

121

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mentioning

confidence: 99%

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Kimoto

Danno

Suda

2008

Physica Status Solidi (b)

121

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“…On‐voltage at 250°C was reduced to 4.1 V, and leakage current density was relatively low at 1‐2.5 × 10 −2 A/ cm 2 . In 2004, the world's first ultrahigh‐voltage SiC switching elements–12.7‐kV SiC commutated GTO thyristors (below referred to as SiCGT)–were developed . That device had on‐voltage of 6.6 V at 100 A/cm 2 , leakage current density 1 × 10 −3 A/ cm 2 at 250°C, turn‐on time of 0.2 microseconds; turn‐off time was 2.7 microseconds, that is, more than 10 times shorter than in 6‐kV class Si commutated GTO thyristors.…”

Section: Zero‐based Development Of Sic Devicesmentioning

confidence: 99%

Developments of SiC devices and SiC inverters aimed at electric power applications

Sugawara

2019

Electrical Engineering Japan

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The developments of SiC power devices has been proceeded remarkably since 1990. SiC power devices have been payed attentions as one of the candidate power devices for next HVDC transmissions and its R&Ds have been started in the KANSAI electric power company since 1995. In this paper, a series of R&Ds for the SiC devices and SiC inverters performed in the company are presented from the historical viewpoints.

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“…The presence of high exceeding carrier concentration which contributes to conductivity is governed by carrier lifetime. Long carrier lifetime under high injection condition is required to obtain effective conductivity modulation that helps to reduce the on-state resistance [44,48,49]. However, a very long carrier lifetime could increase the recovery time, leading to the decrease of the switching frequency and the increase of the witching loss.…”

Section: Carrier Lifetime In Sicmentioning

confidence: 99%

Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

Trinh¹

2015

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Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped Al x Ga 1-x N was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. Understanding the electronic structure of Si and carrier compensation processes is the essential for improving the n-type doping of high-Al-content Al x Ga 1-x N. In our studies of Si-doped AlGaN layers grown by metal-organic chemical vapor deposition, Electron Paramagnetic Resonance (EPR) was used to study the electronic structure of Si in high-Al-content Al x Ga 1-x N.From the temperature dependence of the concentration of the Si donor on the neutral charge state E d determined by EPR, we showed that Si already forms a stable DX center in Al x Ga 1-x N with x ~0.77. However, with the Fermi level locating only ~3 meV below E d , Si still behaves as a shallow donor and high conductivity at room temperature could be achieved in Al 0.77 Ga 0.23 N:Si layers. In samples with the concentration of the residual oxygen (O) impurity larger than that of Si, we observed no carrier compensation by O in Al 0.77 Ga 0.23 N:Si layers, suggesting that at such Al content, O does not seem to hinder the n-type doping in the material. The result is presented in paper 1.In paper 2, we determined the dependence of the E DX level of Si on the Al content in Al x Ga 1-x N:Si layers (0.79≤x≤1) with the Si concentration of ~2×10 18 cm -3 and the concentrations of residual O and C impurities of about an order of magnitude lower (~1÷2×10 17 cm -3 ). We found the coexistence of two DX centers (stable and metastable ones) of Si in Al x Ga 1-x N for x≥0.84. For the stable DX center, abruptly deepening of E DX with increasing of the Al content for x≥0.83 was observed, explaining the drastic decrease of the conductivity as often reported in previous transport studies. For the metastable DX center, the E DX level remains close to E d for x=0.84÷1 (~11 meV for AlN).The Z 1 /Z 2 defect is the most common deep level revealed by Deep Level Transient Spectroscopy (DLTS) in 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD). It has previously been shown by DLTS to be a negative-U system which is more stable with capturing two electrons. The center is also known to be the lifetime killer in asiv grown CVD material and, therefore, attracts much attention. Despite nearly two decades of intensive studies, including theoretical calculations and different experimental techniques, the origin of the Z 1 /Z 2 center remains unclear. EPR is known to be a powerful method for defect identification, but a direct correlation between EPR and DLTS is difficult due to different requirements on samples for each technique. Using high n-type 4H-SiC CVD free-standing layers irradiated with lowenergy (250 keV) electrons, which mainly displace carbon atoms creating C vacancies, C interstitials and their associated defects, it was possible...

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12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

Cited by 30 publications

References 2 publications

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation

Developments of SiC devices and SiC inverters aimed at electric power applications

Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

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