Um estudo comparativo envolvendo técnicas de análise por espectroscopia no infravermelho com transformada de Fourier (FTIR) de transmissão, reflexão e fotoacústica é apresentado com análise de poliamida-6. O potencial e as limitações destes métodos são investigados para analisar as alterações espectrométricas que ocorrem no interior e na superfície da poliamida-6, reciclada, e irradiada na presença de oxigênio, com feixe de elétrons de 1,5 MeV, na dose de 500 kGy. As técnicas mostram-se sensíveis para detectar pequenas mudanças de estruturas que ocorrem na poliamida-6 reciclada e irradiada. Os espectros sugerem formação de grupos --OH, HOC=O-, e -C=O, e mudanças estruturais relacionadas com grupos NH e -CN-C=O. Basicamente, as mesmas alterações espectrométricas são observadas com o uso das técnicas, sendo mais evidenciadas no interior das amostras pela espectroscopia-FTIR de transmissão, e na sua superfície, pela microscopia-FTIR.
We present in this paper a case of technological competence development in the aerospace sector in Brazil, by addressing the complete cycle of integrated circuits for satellite applications, an area of high technology which is strategic to the country. The development of technological and business competences is linked to an understanding of the existing relations between different participating institutions, both public and private. There is an effort to establish a network for the development of radiation-hard integrated circuits in Brazil, comprising universities, research centers, private companies, design houses, funding and governmental agencies. These institutions have been working to define their roles, through participation in federally funded projects to develop robust component technology for the aerospace industry in Brazil. As a means to maintain and improve this network, it is suggested that long term planning tools such as technology roadmaps be adopted, as well as measures to increase awareness of and help clarify intellectual property issues, which is considered a significant bottleneck to advance technology development in this area. In this sense, open innovation may be considered an alternative for competitively enhancing the outcomes of the sector.
Results of irradiation experiments on a 0.6 m switched-capacitor analog array indicate a sudden recovery of the FPAA performance degradation during the irradiation phase. The main parameter considered to check the performance of the device is the total harmonic distortion of the processed analog signals. The observed recovery is associated with the compensating effects of oxide and interface trapped charge in the NMOS transistors of the array in a particular window of the accumulated dose received by the device. Experimental results are discussed and simulations performed to confirm the hypotheses for the observed phenomenon.Index Terms-Field programmable analog arrays (FPAAs), inactivity windows, radiation effects, total ionizing dose (TID).
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