We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH 4 ) and nitrides the silicon with ammonia (NH 3 ) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp ( ¼ 126 nm, h ¼ 9:8 eV) so that SiH 4 and NH 3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.