On Two-Dimensional Polynomial Interpolation

Abstract

We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH 4 ) and nitrides the silicon with ammonia (NH 3 ) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp ( ¼ 126 nm, h ¼ 9:8 eV) so that SiH 4 and NH 3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.

Powder extrusion: Fundamentals and different applications

“…Fine pulverization of LDPE has been described as a n example of a new method of grinding (13)(14)(15). Using laboratory devices such a s Brabender plastograph or a rotational viscometer (10-121, it is possible to carry out a simple experiment of LDPE pulverization (Fig.…”