The mixed mercury halide lasers HgBr2iHgCI2 and HgBr,iHgl, have each been operated with wavelength-selective cavities and have each demonstrated their ability to provide high-Dower tunable radiation in two different parts of the visible spectrum.
We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH 4 ) and nitrides the silicon with ammonia (NH 3 ) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp ( ¼ 126 nm, h ¼ 9:8 eV) so that SiH 4 and NH 3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.
The synthesis of 1-vinyl-3-and 1-vinyl-5-pyrazolcarboxylic acids is developed and the anti burn activity of the chitosan salts of 1-vinyl-3(5)-carboxylic acids is studied.
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