RHEED pattern of SiC layers on both (100) and (111)Si grown by carbonization were studied. Different deviations from the single crystalline structure were found ranging from twinning up to changes in the orientation and textured growth. Special attention was drawn on lattice relaxation and morphology evolution during the growth of the formed SiC. Relationships between the occurrence of typical RHEED pattern and the morphology and process parameters are presented.
Thin ZnO films are sputtered on silicon substrates. The films are annealed by rapid thermal annealing in oxygen and nitrogen atmosphere. X‐ray diffraction methods are used to estimate the lattice constants, the grain size, and the lattice strain. Higher temperatures lead to decreasing strain and increasing grain size. From the obtained activation energies of the recrystallization process in dependence on annealing atmosphere it is concluded that the recrystallization process is diffusion controlled. The lattice constants at higher temperatures approach the theoretical values and differ for different ambients, caused by the resulting different stoichiometry.
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