Aluminium implantation of p-SiC for ohmic contacts

Spieβ, L.; Nennewitz, O.; Weishart, H.; Lindner, J.; Skorupa, W.; Romanus, H.; Erler, F.; Pezoldt, Jörg

doi:10.1016/s0925-9635(97)00047-2

Cited by 10 publications

(2 citation statements)

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“…With the advances in nanotechnology, especially with nanometer thin films and short annealing times, the knowledge of the diffusion coefficient in low temperature regimes and for short distances is important. For instance, the diffusion of metals into semiconductors should be mentioned to form different types of contacts (e.g., Schottky or Ohmic contacts) . Another diffusion driven field that strongly depends on nanoscale dimensions are self‐propagating high‐temperature synthesis (SHS) materials .…”

Section: Introductionmentioning

confidence: 99%

Diffusion in thin bilayer films during rapid thermal annealing

Grieseler

Kups

et al. 2014

Phys. Status Solidi A

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The knowledge of pre‐exponential factors and activation energies for low temperatures and short annealing times in nanoscaled systems is important for the downscaling of thermal processes. Here, the diffusion coefficients in aluminum–nickel, aluminum–titanium, titanium–silicon, and aluminum–copper bilayers were determined using rapid thermal annealing. The annealing time was set to 500 s and the investigated bilayer thin film thicknesses were 2 µm. The temperatures ranged from 389 to 613 K depending on the bilayer system. For the various material combinations, the diffusion coefficients were determined by elemental depth profiling and compared to literature values. For the aluminum–copper system, a good agreement with literature and a single set of values was found, whereas for aluminum–nickel, aluminum–titanium, and titanium–silicon two or more sets of values were observed.

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Section: Introductionmentioning

confidence: 99%

Diffusion in thin bilayer films during rapid thermal annealing

Grieseler

Kups

et al. 2014

Phys. Status Solidi A

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“…However, the sheet resistance of the SiC layers was high in the range of 5-10 kO/& by this [3]. However, the values of specific contact resistance, r c , to the implanted p-type SiC were relatively low [4][5][6][7]. Thus, a current transport mechanism between metal/implanted SiC interface is not clearly understood.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials

Ito

Tsukimoto

Murakami

2006

Science and Technology of Advanced Materials

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To realize high-performance silicon carbide (SiC) power devices, low-resistance ohmic contacts to p-type SiC must be developed. To reduce the ohmic contact resistance, reduction of the barrier height at metal/SiC interfaces or increase in the doping concentration in the SiC substrates is needed. Since the reduction of barrier height is extremely difficult, the increase in the Al doping concentration in 4H-SiC by an ion-implantation technique was challenged. The Ti/Al and Ni/Ti/Al metals (where a slash ''/'' sign indicates the deposition sequence) were deposited on the Al ion-implanted SiC substrates. By comparing the experimental and theoretical contact resistances, the current transport mechanism through the metal/SiC interfaces was concluded to be thermionic field emission and the barrier height was determined to be $0.4 eV. Although the hole concentration increased with increasing the Al doping concentration in 4H-SiC, the barrier height at metal/SiC interfaces increased due to high density of dislocation loops observed in the implanted SiC layers by transmission electron microscopy. The present experiments suggested that the low-resistance ohmic contacts would be formed when a technique to eliminate the crystal defects formed in the 4H-SiC substrates after ion implantation was developed. r

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