Diamond formation by carbon implantation into cubic silicon carbide

Weishart, H.; Heera, V.; Eichhorn, F.; Pécz, B.; Tóth, László; Skorupa, W.

doi:10.1016/j.diamond.2003.11.017

Cited by 5 publications

(2 citation statements)

References 26 publications

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“…6(b-c). The band at 1310.5 cm À1 is attributed to the peak in the phonon density of states (PDOS) of diamond 31,32 The characteristic of the diamond band is 1335.5 cm À1 for the 1% doped¯lms, while it is 1320.1 cm À1 for the 5% doped¯lms. It is noted that there is also amorphous sp 3 carbon at 1180.2 cm À1 in …”

Section: Raman Spectramentioning

confidence: 99%

EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-Co SUBSTRATES

et al. 2013

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Si-doped diamond¯lms with various Si concentrations are deposited on WC-Co substrates using HFCVD method, with the mixture of acetone, tetraethoxysilane (TEOS) and hydrogen as the reactant source. A variety of characterizations, including FE-SEM, AFM, Raman, XRD, surface pro¯lometer and Rockwell indentation, are conducted to systematically investigate the in°uence of Si incorporation on diamond¯lms. As the Si/C ratio from 0% to 5%, the grain size of as-deposited lms decreases from 4 m to about 50 nm, and the surface roughness reduces from Ra $ 290 nm to Ra $ 180 nm. Besides, the intensity ratio of I(111)/I(220) varies from 0.57 to 0, indicating the h110i preferred orientation of the nanocrystalline structure in the 5% doped diamond¯lms. The silicon doping is bene¯cial for the formation of non-diamond carbide phases in the¯lms, according to the Raman spectra. Moreover, the¯lm adhesion is also improved with the increase of Si/C ratio.

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Section: Raman Spectramentioning

confidence: 99%

EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-Co SUBSTRATES

et al. 2013

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“…From the viewpoint of planar device technology it would be advantageous to produce buried SiC regions in diamond or diamond regions in SiC. In previous investigations we have shown that ion-beam synthesis ͑IBS͒ of diamond nanocrystals in SiC 24,25 or SiC nanocrystals inside the a͒ Electronic mail: v.heera@fz-rossendorf.de 26,27 is feasible. A more detailed study on the formation of epitaxially aligned 3C-SiC by high-dose Si implantation into diamond was published recently.…”

Section: Introductionmentioning

confidence: 99%

n -type conductivity in high-fluence Si-implanted diamond

Weishart

Heera

Skorupa

2005

Journal of Applied Physics

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Epitaxial SiC nanocrystals are fabricated by high-fluence Si implantation into natural diamond at elevated temperatures between 760 and 1100 °C. Fluences under investigation range from 4.5 to 6.2×1017Sicm−2. This implantation scheme yields a buried layer rich of epitaxially aligned SiC nanocrystals within slightly damaged diamond. The generation of a small fraction of graphitic sp2 bonds of up to 15% in the diamond host matrix cannot be avoided. Unintentional coimplantation with nitrogen results in a very high doping level of more than 1021cm−3. Resistivity and Hall measurements in van der Pauw geometry reveal a high, thermally stable n-type conductivity with electron concentrations exceeding 1020cm−3 and mobilities higher than 2cm2∕Vs. It is supposed that both the SiC regions as well as the diamond matrix exhibit n-type conductivity and that the electron transport occurs across the low-resistivity SiC nanograins. In the SiC nanocrystals the electrons originate from nitrogen donors whereas in diamond defects are responsible for the electron conductivity. The formation of disordered graphite, which leads to low electron mobility, is substantially reduced by the SiC formation.

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Inductive effect of phosphorus atoms on the formation of graphite-like clusters in silicon carbide during irradiation

Wang

Liu

et al. 2019

Journal of Nuclear Materials

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Diamond formation by carbon implantation into cubic silicon carbide

Cited by 5 publications

References 26 publications

EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-Co SUBSTRATES

EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-Co SUBSTRATES

n -type conductivity in high-fluence Si-implanted diamond

Inductive effect of phosphorus atoms on the formation of graphite-like clusters in silicon carbide during irradiation

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