Ohmic contacts to p-type 6H-silicon carbide

Nennewitz, O.; Spieß, Lothar; Breternitz, V.

doi:10.1016/0169-4332(95)00144-1

Cited by 21 publications

(6 citation statements)

References 2 publications

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“…Such a difference might be attributed to local differences in the electrical activation of the implanted doping species [13]. When the estimated ρ c values above the minimum resolution of the method are compared with data from the literature [1][2][3][4][5] the plot of figure 7 is obtained. The data at high temperature are comparable with the typical literature data.…”

Section: Discussionmentioning

confidence: 99%

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Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Moscatelli

Scorzoni

Poggi

et al. 2003

Semicond. Sci. Technol.

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This paper deals with the electrical characterization of low resistance Al-Ti 72/28 wt% ohmic contacts to a p-type ion implanted 6H-SiC layer. Transmission line model (TLM) structures were realized on the top of MESA islands defined in this ion implanted layer. A metal scheme composed of Al-1%Si(350 nm)/Ti(80 nm) was deposited by sputtering, photolithography defined and annealed at 1000 • C in Ar for 2 min. TLM structures were measured as a function of the temperature in the range 25-290 • C. The TLM data were mainly analysed by a two-dimensional finite difference simulation tool that takes into account the current crowding effect at the contact periphery. Extracted contact resistivity values fall in the low range of data from the literature. The sheet resistance values computed from the TLM data agreed with those measured using Van der Pauw devices realized next to the TLM structures.

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Section: Discussionmentioning

confidence: 99%

“…The Al-Ti alloy has been widely used for many years to form ohmic contacts to p-type SiC [1][2][3][4]. In a recent work [5] a 70/30 wt% Al-Ti alloy composition has been proposed with good results to p-type SiC epilayers.…”

Section: Introductionmentioning

confidence: 99%

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Moscatelli

Scorzoni

Poggi

et al. 2003

Semicond. Sci. Technol.

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“…The voltage drop between the inner contacts 23 U was measured for a current applied either between the inner contacts 23 I or between the outward contacts 14 I . The specific contact resistance can be calculated according to the following equation [29]: ( ) ( ) ln /2 / /2 2 l n 2…”

Section: Electrical Measurementsmentioning

confidence: 99%

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Reshanov

Emtsev

Speck

et al. 2008

Physica Status Solidi (b)

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Photoelectron spectroscopy and electrical measurements were used to study the graphite/SiC‐interface with emphasis on the Schottky barrier formation. The investigations revealed a strong dependence of the Schottky barrier height on the surface polarity of SiC. In the case that the graphite layer was prepared on the Si(0001)‐face of n‐/p‐type 4H‐ and n‐/p‐type 6H‐SiC, the Fermi level is pinned close to the conduction band edge at the interface. The Schottky barrier fabricated on n‐type 4H‐SiC (0001) is 0.6 eV, whereas on n‐type 6H‐SiC (0001) it is lower and amounts (0.3–0.55) eV. On p‐type 4H‐/6H‐SiC, the Schottky barrier is 2.6 eV and (2.3–2.7) eV, respectively. When the Schottky barrier is prepared on the C‐face (000$ \bar 1 $) of n‐type 6H‐SiC, the Fermi level is pinned close to the middle of the band gap. In this case, the Schottky barrier height is found to be equal to 1.4 eV. It is demonstrated that the carbon/graphite formation at the interface between metal and n‐type 4H‐SiC does not ensure ohmic behavior. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The Al-Ti alloy has been widely used for many years to form ohmic contacts to p-type SiC [1]- [4]. In recent work [5] a 70/30 wt.…”

Section: Introductionmentioning

confidence: 99%

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Moscatelli

Scorzoni²,

Poggi

et al. 2003

MSF

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This paper deals with the electrical characterization of low resistance Al-Ti 70/30 wt.% ohmic contacts to a p-type ion implanted 6H-SiC layer. Transmission Line Model (TLM) structures were realized on the top of mesa islands defined in the ion implanted layer. A metal scheme composed of Al-1%Si(350nm)/Ti(80nm) was deposited by sputtering, photolitography defined and annealed at 1000°C in Ar for 2 min. Contact resistance was measured from in-line TLM structures as a function of the temperature in the range 25-290°C. The TLM data were analyzed by both the usual one-dimensional model and a more realistic 2-dimensional finite difference simulation tool that takes into account the current crowding effect at the contact periphery. Extracted contact resistivity values fall in the low range of data from the literature.

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Ohmic contacts to p-type 6H-silicon carbide

Cited by 21 publications

References 2 publications

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

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