The Hall effect and electrical conductivity in the range of 310-420 K as well as room-temperature optical transmission of semi-insulating p-type CdTe:Cl crystals grown by the modified physical vapor transport method have been investigated. An anomalous change of their electrical parameters and mid IR-transmittance in consequence of low-temperature short-time annealing and also a non-typical temperature dependence of hole Hall mobility have been observed. The observed peculiarities are explained by inhomogeneous spatial dopant distribution within the crystals followed by the formation of chlorine-involved clusters, precipitates and inclusions that are modified during heating.
Growth steps and set-up for the pure and chlorine doped cadmium telluride single crystals preparation by a vertical configuration of sublimation travelling heater method without seeding are described. The structural, electrical and transport properties of as-grown material were investigated by different techniques: infrared transmission spectroscopy, double-crystal X-ray diffractometry, Hall effect, conductivity, photoelectric measurements and chemical etching. It was concluded that the most suitable material for fabrication of X-ray and γ-ray non-cooling detectors are single crystals doped with Cl in the range of N Cl = 1018 -10 19 cm -3 .
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