Asymmetric conduction in a thin film tantalum/tantalum oxide/metal structure depends strongly on the method of preparation of the individual elements as well as the conditions under which the structure is measured. Some of the factors which need to be considered are: (i) gas and alloy metal content of the sputtered tantalum film; (ii) structural perfection of the tantalum film; (i/i) nature of the metal counter electrode; and (iv) ambient
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