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Zirconia thin films deposited on 316L stainless-steel substrate were prepared by DC unbalanced magnetron sputtering from a metallic zirconium target at low temperature with the target-to-substrate distance (d t-s) of 100 mm and sputtering power of 180 W. High purity gas of Ar as the working gas and O 2 as the reactive gas were used. The depositions were performed for 120 min at a total pressure of 0.5 Pa. The effect of thermal treatment on the HA formation was investigated. The bioactivity was assessed by investigating the formation of hydroxyapatite (HA) on the surface soaked in simulated body fluids (SBF). Films structure, surface morphology and chemical composition of the ZrO 2 films and HA formation were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and FT-IR spectroscopy. The XRD results demonstrate the ZrO 2 films are monoclinic phase. The annealed films show the higher film crystalline due to the rearrangement of film structure. After being immersed the samples in SBF, the bone-like apatite was observed on all ZrO 2 films, but a denser and more continuous HA layer were observed on annealed films due to the crystallinity of ZrO 2 films.

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In this work, TiO2thin films were prepared by a sol-gel spin coating method on glass slide, stainless steel 304 and silicon wafer substrates. The thin films were annealed at different temperatures at ambient atmosphere. The effect of substrates and annealing temperatures on microstructure, surface morphology and hydrophilicity of the films were characterized by Raman spectroscopy, atomic force microscopy and water contact angle measurement, respectively. The Raman spectra indicated that the annealed TiO2thin films (at 550 °C) coated on stainless steel and silicon wafer exhibited anatase structure. The contact angle of all samples decreased with increasing the UV-irradiation time and annealing temperature.

Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 x 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial position of the cathode. The deposition time for each deposition was 60 min. The films were characterized by X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). The XRD results and TEM images show that the crystalline rutile TiO2 films can be successfully deposited on an unheated substrate.