Bismuth-containing borate glasses, xBi2O3-(1-x)B2O3, were synthesized in the broad composition range 0.20≤x≤0.80 by melting in Pt crucibles and splat-quenching between two metal blocks. Infrared reflectance spectra, measured in the range...
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate-to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise (RTN). Carrier number and mobility fluctuations are considered as the main causes of low frequency noise. While their effect on the bias-dependence of LFN has been well investigated, the way these noise mechanisms contribute to the bias-dependence of variability of LFN has been less well understood. LFN variability has been shown to be maximized in weak inversion (sub-threshold), while increased drain bias also increases LFN variability. However, no compact model has been proposed to explain this bias-dependence in detail. In combination with the charge-based formulation of LFN, the present paper proposes a new model for bias-dependence of LFN variability. Comparison with experimental data from moderately-sized NMOS and PMOS transistors at all bias conditions provides insight into how carrier number and mobility fluctuation mechanisms impact the bias-dependence of LFN variability.
We present a unified charge-based model for double-gate and cylindrical architectures of junction fieldeffect transistors (JFETs). The central concept is to consider the JFET as a junctionless FET (JLFET) with an infinitely thin insulating layer, leading to analytical expressions between charge densities, current, and voltages without any fitting parameters. Assessment of the model with numerical technology computer-aided design simulations confirms that holding the JFET as a special case of the JLFET is justified in all the regions of operation, i.e., from deep depletion to flat-band and from linear to saturation. Index Terms-Cylindrical gate all around junction fieldeffect transistor (JFET), double-gate FETs, nanowire FETs, power semiconductor FETs, radiation-hard electronics, vertical JFET (V-JFET).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.