We show that the effect of a high-temperature environment in current transport through a normal metalinsulator-superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source. DOI: 10.1103/PhysRevLett.105.026803 PACS numbers: 73.40.Gk, 06.20.Jr, 72.70.+m, 73.20.At Introduction.-The density of states (DOS) of the carriers governs the transport rates in a mesoscopic conductor [1], e.g., in a tunnel junction. Understanding the current transport in a junction in detail is of fundamental interest, but it plays a central role also in practical applications, for instance, in the performance of superconducting qubits [2], of electronic coolers and thermometers [3], and of a singleelectron turnstile to be discussed in this Letter [4]. When one or both of the contacts of a junction are superconducting, the one-electron rates at small energy bias should vanish at low temperatures because of the gap in the Bardeen-Cooper-Schrieffer (BCS) DOS [5]. Yet, a small linear in voltage leakage current persists in the experiments [3,6-10] that can often be attributed to the Dynes DOS, a BCS-like expression with lifetime broadening [11,12]. A junction between two leads admits carriers to pass at a rate that depends on the DOS of the conductors, the occupation of the energy levels, and the number of conduction channels in the junction [13]. In general, basic one-electron tunneling coexists with many-electron tunneling, for instance, cotunneling in multijunction systems [14], or Andreev reflection in superconductors [15,16]. However, when the junction is made sufficiently opaque, a common situation in practice, only one-electron tunneling governed by the Fermi golden rule should persist. We demonstrate experimentally that the subgap current in a high-quality opaque tunnel junction between a normal metal and a superconductor can be ascribed to photon-assisted tunneling. We show theoretically that this leads exactly to the Dynes DOS with an inverse lifetime of e 2 k B T env R=@ 2 , where T env and R are the temperature and effective resistance of the environment.We employ a tunnel junction with a normal metalinsulator-superconductor (NIS) structure; see Fig. 1(a). The essentially constant DOS in the normal metal renders

Ion processing of the reactive surface of a free-standing polycrystalline metal film induces a flow of atoms into grain boundaries, resulting in plastic deformation. A thorough experimental and theoretical analysis of this process is presented, along with the demonstration of novel engineering concepts for precisely controlled 3D assembly at micro- and nanoscopic scales.

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000:1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines microm(-1) with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15:1 (e.g. 600 nm high pillars 40 nm in diameter).

Thanks for all your contributions to discussion, data analyzing, measurements, as well as suggestions. Finally, I would like to thank my parents for their encouragement, support, and everlasting love.

Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines microm(- 1).