The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Sievilä, Päivi; Chekurov, Nikolai; Tittonen, Ilkka

doi:10.1088/0957-4484/21/14/145301

Cited by 58 publications

(35 citation statements)

References 19 publications

(21 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Significant effort has been devoted to investigating methods for defining functional 3D micro/nanoscale structures, including direct material deposition, [7][8][9][10] nanotransfer printing, [11][12][13] inkjet printing, [14] optical lithography, [15][16][17][18] self-assembly, [19] and charged-particle beam lithography. [23] Electron beam lithography (EBL), a prevalent [23] Electron beam lithography (EBL), a prevalent…”

Section: Helium Ion Beam Lithographymentioning

confidence: 99%

“…[39,40] When used as a high-resolution lithography tool, helium ion beam lithography (HIBL) has achieved record-high-resolution patterning of 8 nm pitch dense lines. [23] Electron beam lithography (EBL), a prevalent In particular, a throughmembrane exposure method is developed to make visible and subsequently to measure the 3D interaction volume and energy deposition of helium ions in HSQ.…”

mentioning

confidence: 99%

See 1 more Smart Citation

3D Volumetric Energy Deposition of Focused Helium Ion Beam Lithography: Visualization, Modeling, and Applications in Nanofabrication

Zhu

Alkemade

Veldhoven

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

COMMUNICATION (1 of 8)charged-particle beam lithography technique, has shown great potential in 3D nanoscale fabrication with high precision at the submicron scale. 3D nanofabrication has been demonstrated using low-energy EBL based on the saturation of exposure depth and width, [24] multiple electron beam exposures at different exposure energies, [20,25] continuous overlay electron beam exposures, [26][27][28] and grayscale EBL [29,30] among others. To the same end, 3D nanostructures have also been fabricated in bilayer resist stacks by EBL, [31] which was enabled by the difference in dose sensitivity of two different resists. However, in this approach, multiple coatings of resists with different sensitivities are required. Moreover, there is a limited selection of suitable combinations of high-resolution resists. The recently introduced scanning helium ion microscope (HIM) is a superior tool in high-resolution imaging, thanks to its minimized sample charging through flood charge neutralization, enhanced depth of field, and short De Broglie wavelength. As a scanning focused-ion-beam instrument, HIM can perform high-resolution nanofabrication by milling, [32,33] etching, [34] deposition, [35,36] modification of materials, [37,38] and lithographic patterning in resists. [39,40] When used as a high-resolution lithography tool, helium ion beam lithography (HIBL) has achieved record-high-resolution patterning of 8 nm pitch dense lines. [41] Moreover, the narrow interaction volume of helium ions in resist materials makes HIBL a promising candidate for In this paper, 3D volumetric energy deposition and local crosslinking of hydrogen silsesquioxane (HSQ) are experimentally and numerically explored in focused helium ion beam lithography (HIBL). In particular, a throughmembrane exposure method is developed to make visible and subsequently to measure the 3D interaction volume and energy deposition of helium ions in HSQ. By comparing the actual dimensions of the crosslinked HSQ structures with Monte Carlo modeling of the spatial distribution of the energy deposition, the critical energy density for crosslinking HSQ is obtained. Finally, 3D nanofabrication of complex crosslinked HSQ nanostructures such as embedded nanochannels and suspended grids is demonstrated using two different exposure configurations. The proposed method expands the 2D point spread function of HIBL into three dimensions, thus opening a new avenue for nanoscale 3D fabrication. Helium Ion Beam LithographyThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admi.201800203.3D micro/nanostructures are important for electronic, [1] photonic, [2] plasmonic, [3] microfluidic, [4] bio-MEMS, [5] and chemical synthesis [6] applications. Directly patterning materials into 3D micro/nanostructures has recently attracted considerable attention. Significant effort has been devoted to investigating methods for defining functional 3D micro/nanoscale structures, including direct material deposition, [7][8][9][10] ...

show abstract

Section: Helium Ion Beam Lithographymentioning

confidence: 99%

mentioning

confidence: 99%

3D Volumetric Energy Deposition of Focused Helium Ion Beam Lithography: Visualization, Modeling, and Applications in Nanofabrication

Zhu

Alkemade

Veldhoven

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…All anisotropic etchants of Si are aqueous, alkaline solutions, whereas the main component can be either organic, e.g., in TMAH, (CH 3 ) 4 NOH [61], NH 2 (CH 2 ) 2 NH 2 or CH 6 H 4 (OH) 2 [62], or inorganic, e.g., in KOH or NaOH [63][64][65]. In general, Fig.…”

Section: Dependence On the Si Crystal Planesmentioning

confidence: 99%

Nanostructures by Mass-Separated FIB

Bischoff

Böttger

Philipp

et al. 2013

Lecture Notes in Nanoscale Science and Technology

View full text Add to dashboard Cite

The introduction of mass-separated systems in the field of focused ion beams significantly increases the area of application in nanotechnology due to the availability of a broad spectrum of ions with the same advantages compared to classical Ga instruments. A short description of the configuration of a mass-separated FIB tool is given as well as the fundamentals of alloy liquid metal ion sources. Examples of application include patterned tailoring of functional surfaces and ioninduced phase transformation in thin layers, in particular the Si nanowire fabrication by FIB implantation and subsequent wet-chemical, anisotropic etching and the FIB lithography of thin ta-C films. Furthermore, the ion beam synthesis (IBS) of CoSi 2 nanostructures by Co-FIB writing and annealing, and the modification of surface morphology by various mono-and polyatomic projectiles in a broad energy and temperature range in different materials are described and discussed.

show abstract

“…17 The process consists of cycles of chemical vapor deposition of an Si layer and local ion implantation into the layer by focused ion beam (FIB) writing, and is finished off with a final etch to form the 3D Si structures defined by the implantation. This process makes use of the high etch selectivity that can be achieved in semiconductor materials by local ion implantation, [18][19][20][21][22][23][24][25][26][27][28] thereby forming patterns in the material with lateral dimensions of down to 20 nm. 25 The proposed implementation of the layer-by-layer fabrication process is schematically illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Gylfason

Fischer

Malm

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Nanofabrication of high aspect ratio (50:1) sub-10nm silicon nanowires using inductively coupled plasma etching J. Vac. Sci. Technol. B 30, 06FF02 (2012) Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature J. Vac. Sci. Technol. Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro-and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity.

show abstract

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Cited by 58 publications

References 19 publications

3D Volumetric Energy Deposition of Focused Helium Ion Beam Lithography: Visualization, Modeling, and Applications in Nanofabrication

3D Volumetric Energy Deposition of Focused Helium Ion Beam Lithography: Visualization, Modeling, and Applications in Nanofabrication

Nanostructures by Mass-Separated FIB

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Contact Info

Product

Resources

About