Self‐organized semiconductor quantum dots represent almost ideal two‐level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close‐to‐ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra‐stable singlet‐triplet spin qubits for efficient spin‐photon interfaces and for deterministic photonic 2D cluster‐state generation. An advanced quantum dot molecule (QDM) device is realized and excellent optical properties are demonstrated. The device includes electrically controllable QDMs based on stacked quantum dots in a pin‐diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in situ electron beam lithography. A photon extraction efficiency of up to (24 ± 4)% is measured in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single‐photon emission properties with a multi‐photon suppression of g(2)false(0false)=false(3.9±0.5false)×10−3. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.

Scalable photonic quantum computing architectures pose stringent requirements on photonic processing devices. The needs for low-loss high-speed reconfigurable circuits and near-deterministic resource state generators are some of the most challenging requirements. Here, we develop an integrated photonic platform based on thin-film lithium niobate and interface it with deterministic solid-state single-photon sources based on quantum dots in nanophotonic waveguides. The generated photons are processed with low-loss circuits programmable at speeds of several gigahertz. We realize a variety of key photonic quantum information processing functionalities with the high-speed circuits, including on-chip quantum interference, photon demultiplexing, and reprogrammability of a four-mode universal photonic circuit. These results show a promising path forward for scalable photonic quantum technologies by merging integrated photonics with solid-state deterministic photon sources in a heterogeneous approach to scaling up.

Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/µm2 and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

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