We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, independent InGaAs/GaAs quantum-light-emitting-diodes (QLEDs) with a silicon oxynitride waveguide circuit. Each waveguide joining the circuit can then be excited by a separate, independently electrically contacted QLED. We show that the emission from neighbouring QLEDs can be independently tuned to degeneracy using the Stark Effect and that the resulting photon streams are indistinguishable. This enables on-chip Hong-Ou-Mandel-type interference, as required for many photonic quantum information processing schemes.
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fine structure splitting.
Self‐organized semiconductor quantum dots represent almost ideal two‐level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close‐to‐ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra‐stable singlet‐triplet spin qubits for efficient spin‐photon interfaces and for deterministic photonic 2D cluster‐state generation. An advanced quantum dot molecule (QDM) device is realized and excellent optical properties are demonstrated. The device includes electrically controllable QDMs based on stacked quantum dots in a pin‐diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in situ electron beam lithography. A photon extraction efficiency of up to (24 ± 4)% is measured in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single‐photon emission properties with a multi‐photon suppression of g(2)false(0false)=false(3.9±0.5false)×10−3. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.
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